Defects in AlN as candidates for solid-state qubits

Varley, J. B.; Janotti, A.; Van de Walle, C. G.

doi:10.1103/PhysRevB.93.161201

Title: Defects in AlN as candidates for solid-state qubits

Authors:: Varley, J. B.; Janotti, A.; Van de Walle, C. G.

Publication Date:: Fri Apr 01 00:00:00 EDT 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1245041

Grant/Contract Number:: AC52-07NA27344

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 16; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Varley, J. B., Janotti, A., and Van de Walle, C. G. Defects in AlN as candidates for solid-state qubits.  United States: N. p., 2016. 
Web.  doi:10.1103/PhysRevB.93.161201.

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                    Varley, J. B., Janotti, A., & Van de Walle, C. G. Defects in AlN as candidates for solid-state qubits.  United States.  https://doi.org/10.1103/PhysRevB.93.161201

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                    Varley, J. B., Janotti, A., and Van de Walle, C. G. Fri .  
"Defects in AlN as candidates for solid-state qubits".  United States.  https://doi.org/10.1103/PhysRevB.93.161201.

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@article{osti_1245041,

  title        = {Defects in AlN as candidates for solid-state qubits},

  author       = {Varley, J. B. and Janotti, A. and Van de Walle, C. G.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.93.161201},

  journal      = {Physical Review B},

  number       = 16,

  volume       = 93,

  place        = {United States},

  year         = {Fri Apr 01 00:00:00 EDT 2016},

  month        = {Fri Apr 01 00:00:00 EDT 2016}

}

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Title: Defects in AlN as candidates for solid-state qubits

Citation Formats

Universal Dynamical Decoupling of a Single Solid-State Spin from a Spin Bath journal, September 2010

A paramagnetic neutral V Al O N center in wurtzite AlN for spin qubit application journal, August 2013

Hybrid functional calculations of D X centers in AlN and GaN journal, February 2014

Valence band splittings and band offsets of AlN, GaN, and InN journal, October 1996

Hybrid functionals based on a screened Coulomb potential journal, May 2003

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1) journal, November 2004

Electrostatic interactions between charged defects in supercells journal, December 2010

Quantum computing with defects journal, April 2010

Quantum computing with defects journal, October 2013

Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth journal, January 2011

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors journal, April 2012

Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures journal, April 2013

Spin-Light Coherence for Single-Spin Measurement and Control in Diamond journal, October 2010

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations journal, January 2009

Sulfur doping of AlN and AlGaN for improved n-type conductivity: Sulfur doping of AlN and AlGaN for improved n-type conductivity journal, July 2015

Single-Shot Readout of a Single Nuclear Spin journal, July 2010

First-principles calculations for point defects in solids journal, March 2014

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal, June 2006

Theory of Neutral Divacancy in SiC: A Defect for Spintronics journal, April 2010

Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams journal, October 2007

Defects in SiC for quantum computing journal, May 2011

Room temperature coherent control of defect spin qubits in silicon carbide journal, November 2011

Polytype control of spin qubits in silicon carbide journal, May 2013

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN journal, October 2007

Report on the growth of bulk aluminum nitride and subsequent substrate preparation journal, October 2001

Coherent control of single spins in silicon carbide at room temperature journal, December 2014

Band structure and fundamental optical transitions in wurtzite AlN journal, December 2003

UV transparent single-crystalline bulk AlN substrates journal, January 2010

Shallow donor and DX states of Si in AlN journal, February 2011

Role of screening in the density functional applied to transition-metal defects in semiconductors journal, May 2013

Diffusivity of native defects in GaN journal, January 2004

Universal Dynamical Decoupling of a Single Solid-State Spin from a Spin Bath
journal, September 2010

A paramagnetic neutral V _Al O _N center in wurtzite AlN for spin qubit application
journal, August 2013

Hybrid functional calculations of $D X$ centers in AlN and GaN
journal, February 2014

Valence band splittings and band offsets of AlN, GaN, and InN
journal, October 1996

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1)
journal, November 2004

Electrostatic interactions between charged defects in supercells
journal, December 2010

Quantum computing with defects
journal, April 2010

Quantum computing with defects
journal, October 2013

Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
journal, January 2011

Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
journal, April 2012

Optically Controlled Switching of the Charge State of a Single Nitrogen-Vacancy Center in Diamond at Cryogenic Temperatures
journal, April 2013

Spin-Light Coherence for Single-Spin Measurement and Control in Diamond
journal, October 2010

Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations
journal, January 2009

Sulfur doping of AlN and AlGaN for improved n-type conductivity: Sulfur doping of AlN and AlGaN for improved n-type conductivity
journal, July 2015

Single-Shot Readout of a Single Nuclear Spin
journal, July 2010

First-principles calculations for point defects in solids
journal, March 2014

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
journal, June 2006

Theory of Neutral Divacancy in SiC: A Defect for Spintronics
journal, April 2010

Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams
journal, October 2007

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journal, May 2011

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journal, November 2011

Polytype control of spin qubits in silicon carbide
journal, May 2013

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journal, October 2007

Report on the growth of bulk aluminum nitride and subsequent substrate preparation
journal, October 2001

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journal, December 2014

Band structure and fundamental optical transitions in wurtzite AlN
journal, December 2003

UV transparent single-crystalline bulk AlN substrates
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Shallow donor and DX states of Si in AlN
journal, February 2011

Role of screening in the density functional applied to transition-metal defects in semiconductors
journal, May 2013

Diffusivity of native defects in GaN
journal, January 2004