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Title: Antisite defects at oxide interfaces

Authors:
;
Publication Date:
Grant/Contract Number:
DOE-ER-046169
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 10; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1244781

Chen, Hanghui, and Millis, Andrew. Antisite defects at oxide interfaces. United States: N. p., Web. doi:10.1103/PhysRevB.93.104111.
Chen, Hanghui, & Millis, Andrew. Antisite defects at oxide interfaces. United States. doi:10.1103/PhysRevB.93.104111.
Chen, Hanghui, and Millis, Andrew. 2016. "Antisite defects at oxide interfaces". United States. doi:10.1103/PhysRevB.93.104111.
@article{osti_1244781,
title = {Antisite defects at oxide interfaces},
author = {Chen, Hanghui and Millis, Andrew},
abstractNote = {},
doi = {10.1103/PhysRevB.93.104111},
journal = {Physical Review B},
number = 10,
volume = 93,
place = {United States},
year = {2016},
month = {3}
}