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Title: Origin of thickness dependence of structural phase transition temperatures in BiFeO 3 thin films

In this study, two structural phase transitions are investigated in highly strained BiFeO 3 thin films grown on LaAlO 3 substrates, as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA, and MA to tetragonal) decrease as the film becomes thinner. The existence of an interface layer at the film-substrate interface, deduced from half-order peak intensities, contributes to this behavior only for the thinnest samples; at larger thicknesses (above a few nanometers) the temperature dependence can be understood in terms of electrostatic considerations akin to size effects in ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase and related to the rearrangement rather than the formation of domains. For ultra-thin films, the tetragonal structure is stable at all investigated temperatures (down to 30 K).
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [5] ;  [6]
  1. Univ. of Michigan, Ann Arbor, MI (United States); Univ. of California, Los Angeles, CA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Florida State Univ., Tallahassee, FL (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); ASML, Veldhoven (The Netherlands)
  4. Paul Scherrer Institut (PSI), Villigen (Switzerland); Argonne National Lab. (ANL), Argonne, IL (United States)
  5. Univ. of Michigan, Ann Arbor, MI (United States)
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725; AC02-06CH11357; FG02-06ER46273
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2166-532X
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; ferroelectric phase transitions; ferroelectric thin films; interface structure; thin film growth; Curie point; Ferroelectric phase transistions
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1247948; OSTI ID: 1339283; OSTI ID: 1420554