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Title: Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping; while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.
 [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1]
  1. Univ. of Rochester, Rochester, NY (United States)
  2. Corning Inc., Corning, NY (United States)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Volume: 31; Journal Issue: 4; Journal ID: ISSN 0268-1242
IOP Publishing
Research Org:
Univ. of Rochester, Rochester, NY (United States)
Sponsoring Org:
Country of Publication:
United States
14 SOLAR ENERGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; pump-probe spectroscopy; amorphous silicon; microcrystalline silicon; Shockley-Read-Hall; traps
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1240025