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Title: On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Authors:
 [1] ;  [2] ;  [3] ; ORCiD logo [3] ;  [3] ;  [1] ; ORCiD logo [1] ;  [1] ;  [3]
  1. Department of Information Engineering, University of Padova, Via Gradenigo 6/B, Padova 35131, Italy
  2. Materials Department, University of California, Santa Barbara, California 93106, USA
  3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1242325