Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors

Lin, Ming-Wei; Kravchenko, Ivan I.; Fowlkes, Jason; Li, Xufan; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

doi:10.1088/0957-4484/27/16/165203

Title: Thickness-dependent charge transport in few-layer MoS ₂ field-effect transistors

Authors:: Lin, Ming-Wei; Kravchenko, Ivan I.; Fowlkes, Jason; Li, Xufan; Puretzky, Alexander A.; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

Publication Date:: Thu Mar 10 00:00:00 EST 2016

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1241432

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Nanotechnology

Additional Journal Information:: Journal Name: Nanotechnology Journal Volume: 27 Journal Issue: 16; Journal ID: ISSN 0957-4484

Publisher:: IOP Publishing

Country of Publication:: United Kingdom

Language:: English

Citation Formats


                    Lin, Ming-Wei, Kravchenko, Ivan I., Fowlkes, Jason, Li, Xufan, Puretzky, Alexander A., Rouleau, Christopher M., Geohegan, David B., and Xiao, Kai. Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors.  United Kingdom: N. p., 2016. 
Web.  doi:10.1088/0957-4484/27/16/165203.

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                    Lin, Ming-Wei, Kravchenko, Ivan I., Fowlkes, Jason, Li, Xufan, Puretzky, Alexander A., Rouleau, Christopher M., Geohegan, David B., & Xiao, Kai. Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors.  United Kingdom.  https://doi.org/10.1088/0957-4484/27/16/165203

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                    Lin, Ming-Wei, Kravchenko, Ivan I., Fowlkes, Jason, Li, Xufan, Puretzky, Alexander A., Rouleau, Christopher M., Geohegan, David B., and Xiao, Kai. Thu .  
"Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors".  United Kingdom.  https://doi.org/10.1088/0957-4484/27/16/165203.

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@article{osti_1241432,

  title        = {Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors},

  author       = {Lin, Ming-Wei and Kravchenko, Ivan I. and Fowlkes, Jason and Li, Xufan and Puretzky, Alexander A. and Rouleau, Christopher M. and Geohegan, David B. and Xiao, Kai},

  abstractNote = {},

  doi          = {10.1088/0957-4484/27/16/165203},

  journal      = {Nanotechnology},

  number       = 16,

  volume       = 27,

  place        = {United Kingdom},

  year         = {Thu Mar 10 00:00:00 EST 2016},

  month        = {Thu Mar 10 00:00:00 EST 2016}

}

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Works referenced in this record:

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS ₂ Layers
journal, November 2014

Li, Song-Lin; Komatsu, Katsuyoshi; Nakaharai, Shu
ACS Nano, Vol. 8, Issue 12
DOI: 10.1021/nn506138y

Mobility Improvement and Temperature Dependence in MoSe ₂ Field-Effect Transistors on Parylene-C Substrate
journal, April 2014

Chamlagain, Bhim; Li, Qing; Ghimire, Nirmal Jeevi
ACS Nano, Vol. 8, Issue 5
DOI: 10.1021/nn501150r

Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂
journal, March 2010

Lee, Changgu; Yan, Hugen; Brus, Louis E.
ACS Nano, Vol. 4, Issue 5
DOI: 10.1021/nn1003937

High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
journal, May 2014

Chuang, Hsun-Jen; Tan, Xuebin; Ghimire, Nirmal Jeevi
Nano Letters, Vol. 14, Issue 6
DOI: 10.1021/nl501275p

Integrated Circuits Based on Bilayer MoS₂ Transistors
journal, January 2012

Wang, Han; Yu, Lili; Lee, Yi-Hsien
Nano Letters, Vol. 12, Issue 9, p. 4674-4680
DOI: 10.1021/nl302015v

Two-Dimensional Crystals: Managing Light for Optoelectronics
journal, June 2013

Eda, Goki; Maier, Stefan A.
ACS Nano, Vol. 7, Issue 7
DOI: 10.1021/nn403159y

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
journal, January 2013

Wu, Sanfeng; Ross, Jason S.; Liu, Gui-Bin
Nature Physics, Vol. 9, Issue 3
DOI: 10.1038/nphys2524

Growth of Large-Area and Highly Crystalline MoS₂ Thin Layers on Insulating Substrates
journal, February 2012

Liu, Keng-Ku; Zhang, Wenjing; Lee, Yi-Hsien
Nano Letters, Vol. 12, Issue 3, p. 1538-1544
DOI: 10.1021/nl2043612

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
journal, May 2013

Liu, Han; Si, Mengwei; Najmaei, Sina
Nano Letters, Vol. 13, Issue 6
DOI: 10.1021/nl400778q

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
journal, July 2013

Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C.
Nano Letters, Vol. 13, Issue 8, p. 3664-3670
DOI: 10.1021/nl401544y

How Good Can Monolayer MoS ₂ Transistors Be?
journal, September 2011

Yoon, Youngki; Ganapathi, Kartik; Salahuddin, Sayeef
Nano Letters, Vol. 11, Issue 9
DOI: 10.1021/nl2018178

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
DOI: 10.1038/nnano.2012.193

Charge Scattering and Mobility in Atomically Thin Semiconductors
journal, March 2014

Ma, Nan; Jena, Debdeep
Physical Review X, Vol. 4, Issue 1
DOI: 10.1103/PhysRevX.4.011043

Electron Transport in Disordered Graphene Nanoribbons
journal, February 2010

Han, Melinda Y.; Brant, Juliana C.; Kim, Philip
Physical Review Letters, Vol. 104, Issue 5
DOI: 10.1103/PhysRevLett.104.056801

High-mobility field-effect transistors based on transition metal dichalcogenides
journal, April 2004

Podzorov, V.; Gershenson, M. E.; Kloc, Ch.
Applied Physics Letters, Vol. 84, Issue 17, p. 3301-3303
DOI: 10.1063/1.1723695

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Ye, J. T.; Zhang, Y. J.; Akashi, R.
Science, Vol. 338, Issue 6111
DOI: 10.1126/science.1228006

Highly Flexible MoS ₂ Thin-Film Transistors with Ion Gel Dielectrics
journal, July 2012

Pu, Jiang; Yomogida, Yohei; Liu, Keng-Ku
Nano Letters, Vol. 12, Issue 8
DOI: 10.1021/nl301335q

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS ₂
journal, August 2013

Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
Nano Letters, Vol. 13, Issue 9
DOI: 10.1021/nl401916s

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
journal, January 2014

Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J.
ACS Nano, Vol. 8, Issue 2
DOI: 10.1021/nn500064s

Measurement of mobility in dual-gated MoS2 transistors
journal, March 2013

Fuhrer, Michael S.; Hone, James
Nature Nanotechnology, Vol. 8, Issue 3
DOI: 10.1038/nnano.2013.30

Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films
journal, February 1998

Graham, Mark R.; Adkins, C. J.; Behar, Haim
Journal of Physics: Condensed Matter, Vol. 10, Issue 4
DOI: 10.1088/0953-8984/10/4/010

Separation of interlayer resistance in multilayer MoS ₂ field-effect transistors
journal, June 2014

Na, Junhong; Shin, Minju; Joo, Min-Kyu
Applied Physics Letters, Vol. 104, Issue 23
DOI: 10.1063/1.4878839

Phonon-limited mobility in $n$ -type single-layer MoS $_{2}$ from first principles
journal, March 2012

Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.
Physical Review B, Vol. 85, Issue 11
DOI: 10.1103/PhysRevB.85.115317

Two-dimensional atomic crystals
journal, July 2005

Novoselov, K. S.; Jiang, D.; Schedin, F.
Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
DOI: 10.1073/pnas.0502848102

Improved Carrier Mobility in Few-Layer MoS ₂ Field-Effect Transistors with Ionic-Liquid Gating
journal, April 2013

Perera, Meeghage Madusanka; Lin, Ming-Wei; Chuang, Hsun-Jen
ACS Nano, Vol. 7, Issue 5
DOI: 10.1021/nn401053g

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
journal, April 2013

Fontana, Marcio; Deppe, Tristan; Boyd, Anthony K.
Scientific Reports, Vol. 3, Issue 1
DOI: 10.1038/srep01634

Transport Properties of Monolayer MoS ₂ Grown by Chemical Vapor Deposition
journal, March 2014

Schmidt, Hennrik; Wang, Shunfeng; Chu, Leiqiang
Nano Letters, Vol. 14, Issue 4
DOI: 10.1021/nl4046922

Ioffe-Regel criterion and resistivity of metals
journal, December 1981

Gurvitch, M.
Physical Review B, Vol. 24, Issue 12
DOI: 10.1103/PhysRevB.24.7404

Technology and metrology of new electronic materials and devices
journal, January 2007

Vogel, Eric
Nature Nanotechnology, Vol. 2, Issue 1
DOI: 10.1038/nnano.2006.142

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

Radisavljevic, Branimir; Kis, Andras
Nature Materials, Vol. 12, Issue 9
DOI: 10.1038/nmat3687

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Mak, Kin Fai; Lee, Changgu; Hone, James
Physical Review Letters, Vol. 105, Issue 13, Article No.136805
DOI: 10.1103/PhysRevLett.105.136805

Surface potential and interlayer screening effects of few-layer MoS ₂ nanoflakes
journal, April 2013

Li, Yang; Xu, Cheng-Yan; Zhen, Liang
Applied Physics Letters, Vol. 102, Issue 14
DOI: 10.1063/1.4801844

Single-Layer MoS₂ Phototransistors
journal, December 2011

Yin, Zongyou; Li, Hai; Li, Hong
ACS Nano, Vol. 6, Issue 1, p. 74-80
DOI: 10.1021/nn2024557

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
journal, April 2012

Liu, Han; Ye, Peide D.
IEEE Electron Device Letters, Vol. 33, Issue 4
DOI: 10.1109/LED.2012.2184520

Breakdown of High-Performance Monolayer MoS ₂ Transistors
journal, October 2012

Lembke, Dominik; Kis, Andras
ACS Nano, Vol. 6, Issue 11
DOI: 10.1021/nn303772b

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
journal, January 2012

Kim, Sunkook; Konar, Aniruddha; Hwang, Wan-Sik
Nature Communications, Vol. 3, Issue 1
DOI: 10.1038/ncomms2018

Electrical control of neutral and charged excitons in a monolayer semiconductor
journal, February 2013

Ross, Jason S.; Wu, Sanfeng; Yu, Hongyi
Nature Communications, Vol. 4, Issue 1
DOI: 10.1038/ncomms2498

Hopping transport through defect-induced localized states in molybdenum disulphide
journal, October 2013

Qiu, Hao; Xu, Tao; Wang, Zilu
Nature Communications, Vol. 4, Issue 1
DOI: 10.1038/ncomms3642

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
journal, July 2013

Li, Song-Lin; Wakabayashi, Katsunori; Xu, Yong
Nano Letters, Vol. 13, Issue 8
DOI: 10.1021/nl4010783

Single-layer MoS₂ transistors
journal, January 2011

Radisavljevic, B.; Radenovic, A.; Brivio, J.
Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
DOI: 10.1038/nnano.2010.279

Thickness-dependent mobility in two-dimensional MoS ₂ transistors
journal, January 2015

Lembke, Dominik; Allain, Adrien; Kis, Andras
Nanoscale, Vol. 7, Issue 14
DOI: 10.1039/C4NR06331G

High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts
journal, June 2012

Fang, Hui; Chuang, Steven; Chang, Ting Chia
Nano Letters, Vol. 12, Issue 7, p. 3788-3792
DOI: 10.1021/nl301702r

High Performance Multilayer MoS₂Transistors with Scandium Contacts
journal, December 2012

Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma
Nano Letters, Vol. 13, Issue 1, p. 100-105
DOI: 10.1021/nl303583v

From Bulk to Monolayer MoS2: Evolution of Raman Scattering
journal, January 2012

Li, Hong; Zhang, Qing; Yap, Chin Chong Ray
Advanced Functional Materials, Vol. 22, Issue 7
DOI: 10.1002/adfm.201102111

Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors
journal, October 2011

Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam
ACS Nano, Vol. 5, Issue 10, p. 7707-7712
DOI: 10.1021/nn202852j

van der Waals Epitaxy of MoS₂ Layers Using Graphene As Growth Templates
journal, May 2012

Shi, Yumeng; Zhou, Wu; Lu, Ang-Yu
Nano Letters, Vol. 12, Issue 6, p. 2784-2791
DOI: 10.1021/nl204562j

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Title: Thickness-dependent charge transport in few-layer MoS 2 field-effect transistors

Citation Formats

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS 2 Layers journal, November 2014

Mobility Improvement and Temperature Dependence in MoSe 2 Field-Effect Transistors on Parylene-C Substrate journal, April 2014

Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2 journal, March 2010

High Mobility WSe 2 p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts journal, May 2014

Integrated Circuits Based on Bilayer MoS2 Transistors journal, January 2012

Two-Dimensional Crystals: Managing Light for Optoelectronics journal, June 2013

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2 journal, January 2013

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates journal, February 2012

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films journal, May 2013

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials journal, July 2013

How Good Can Monolayer MoS 2 Transistors Be? journal, September 2011

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal, November 2012

Charge Scattering and Mobility in Atomically Thin Semiconductors journal, March 2014

Electron Transport in Disordered Graphene Nanoribbons journal, February 2010

High-mobility field-effect transistors based on transition metal dichalcogenides journal, April 2004

Superconducting Dome in a Gate-Tuned Band Insulator journal, November 2012

Highly Flexible MoS 2 Thin-Film Transistors with Ion Gel Dielectrics journal, July 2012

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS 2 journal, August 2013

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides journal, January 2014

Measurement of mobility in dual-gated MoS2 transistors journal, March 2013

Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films journal, February 1998

Separation of interlayer resistance in multilayer MoS 2 field-effect transistors journal, June 2014

Phonon-limited mobility in n -type single-layer MoS 2 from first principles journal, March 2012

Two-dimensional atomic crystals journal, July 2005

Improved Carrier Mobility in Few-Layer MoS 2 Field-Effect Transistors with Ionic-Liquid Gating journal, April 2013

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions journal, April 2013

Transport Properties of Monolayer MoS 2 Grown by Chemical Vapor Deposition journal, March 2014

Ioffe-Regel criterion and resistivity of metals journal, December 1981

Technology and metrology of new electronic materials and devices journal, January 2007

Mobility engineering and a metal–insulator transition in monolayer MoS2 journal, June 2013

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Surface potential and interlayer screening effects of few-layer MoS 2 nanoflakes journal, April 2013

Single-Layer MoS2 Phototransistors journal, December 2011

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric journal, April 2012

Breakdown of High-Performance Monolayer MoS 2 Transistors journal, October 2012

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals journal, January 2012

Electrical control of neutral and charged excitons in a monolayer semiconductor journal, February 2013

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Title: Thickness-dependent charge transport in few-layer MoS ₂ field-effect transistors

Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS ₂ Layers
journal, November 2014

Mobility Improvement and Temperature Dependence in MoSe ₂ Field-Effect Transistors on Parylene-C Substrate
journal, April 2014

Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂
journal, March 2010

High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
journal, May 2014

Integrated Circuits Based on Bilayer MoS₂ Transistors
journal, January 2012

Two-Dimensional Crystals: Managing Light for Optoelectronics
journal, June 2013

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
journal, January 2013

Growth of Large-Area and Highly Crystalline MoS₂ Thin Layers on Insulating Substrates
journal, February 2012

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
journal, May 2013

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
journal, July 2013

How Good Can Monolayer MoS ₂ Transistors Be?
journal, September 2011

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

Charge Scattering and Mobility in Atomically Thin Semiconductors
journal, March 2014

Electron Transport in Disordered Graphene Nanoribbons
journal, February 2010

High-mobility field-effect transistors based on transition metal dichalcogenides
journal, April 2004

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Highly Flexible MoS ₂ Thin-Film Transistors with Ion Gel Dielectrics
journal, July 2012

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS ₂
journal, August 2013

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
journal, January 2014

Measurement of mobility in dual-gated MoS2 transistors
journal, March 2013

Experimental study of the Ioffe-Regel criterion for amorphous indium oxide films
journal, February 1998

Separation of interlayer resistance in multilayer MoS ₂ field-effect transistors
journal, June 2014

Phonon-limited mobility in $n$ -type single-layer MoS $_{2}$ from first principles
journal, March 2012

Two-dimensional atomic crystals
journal, July 2005

Improved Carrier Mobility in Few-Layer MoS ₂ Field-Effect Transistors with Ionic-Liquid Gating
journal, April 2013

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
journal, April 2013

Transport Properties of Monolayer MoS ₂ Grown by Chemical Vapor Deposition
journal, March 2014

Ioffe-Regel criterion and resistivity of metals
journal, December 1981

Technology and metrology of new electronic materials and devices
journal, January 2007

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Surface potential and interlayer screening effects of few-layer MoS ₂ nanoflakes
journal, April 2013

Single-Layer MoS₂ Phototransistors
journal, December 2011

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
journal, April 2012

Breakdown of High-Performance Monolayer MoS ₂ Transistors
journal, October 2012

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
journal, January 2012

Electrical control of neutral and charged excitons in a monolayer semiconductor
journal, February 2013

Hopping transport through defect-induced localized states in molybdenum disulphide
journal, October 2013

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
journal, July 2013

Single-layer MoS₂ transistors
journal, January 2011

Thickness-dependent mobility in two-dimensional MoS ₂ transistors
journal, January 2015

High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts
journal, June 2012

High Performance Multilayer MoS₂Transistors with Scandium Contacts
journal, December 2012

From Bulk to Monolayer MoS2: Evolution of Raman Scattering
journal, January 2012

Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors
journal, October 2011

van der Waals Epitaxy of MoS₂ Layers Using Graphene As Growth Templates
journal, May 2012