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Title: Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Authors:
 [1];  [2];  [2]; ORCiD logo [1];  [1];  [2]
  1. Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
  2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1241416
Grant/Contract Number:  
EEC-1041895
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, Kim, Jun Oh, Lee, Sang Jun, and Honsberg, Christiana B. Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer. United States: N. p., 2016. Web. doi:10.1063/1.4943182.
Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, Kim, Jun Oh, Lee, Sang Jun, & Honsberg, Christiana B. Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer. United States. doi:10.1063/1.4943182.
Kim, Yeongho, Ban, Keun-Yong, Zhang, Chaomin, Kim, Jun Oh, Lee, Sang Jun, and Honsberg, Christiana B. Wed . "Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer". United States. doi:10.1063/1.4943182.
@article{osti_1241416,
title = {Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer},
author = {Kim, Yeongho and Ban, Keun-Yong and Zhang, Chaomin and Kim, Jun Oh and Lee, Sang Jun and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1063/1.4943182},
journal = {Applied Physics Letters},
number = 10,
volume = 108,
place = {United States},
year = {2016},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4943182

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