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Title: Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-03ER46054
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 10; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1240765

Ou, Yu-Sheng, Chiu, Yi-Hsin, Harmon, N. J., Odenthal, Patrick, Sheffield, Matthew, Chilcote, Michael, Kawakami, R. K., Flatté, M. E., and Johnston-Halperin, E.. Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures. United States: N. p., Web. doi:10.1103/PhysRevLett.116.107201.
Ou, Yu-Sheng, Chiu, Yi-Hsin, Harmon, N. J., Odenthal, Patrick, Sheffield, Matthew, Chilcote, Michael, Kawakami, R. K., Flatté, M. E., & Johnston-Halperin, E.. Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures. United States. doi:10.1103/PhysRevLett.116.107201.
Ou, Yu-Sheng, Chiu, Yi-Hsin, Harmon, N. J., Odenthal, Patrick, Sheffield, Matthew, Chilcote, Michael, Kawakami, R. K., Flatté, M. E., and Johnston-Halperin, E.. 2016. "Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures". United States. doi:10.1103/PhysRevLett.116.107201.
@article{osti_1240765,
title = {Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures},
author = {Ou, Yu-Sheng and Chiu, Yi-Hsin and Harmon, N. J. and Odenthal, Patrick and Sheffield, Matthew and Chilcote, Michael and Kawakami, R. K. and Flatté, M. E. and Johnston-Halperin, E.},
abstractNote = {},
doi = {10.1103/PhysRevLett.116.107201},
journal = {Physical Review Letters},
number = 10,
volume = 116,
place = {United States},
year = {2016},
month = {3}
}