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Title: Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In 2Se 3/(Bi 0.5In 0.5) 2Se 3 heterostructure, we introduce a quantum generation of Bi 2Se 3 films with an order of magnitude enhanced mobilities than before. Furthermore, this scheme has led to the first observation of the quantum Hall effect in Bi 2Se 3.
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [1] ;  [4] ;  [4] ;  [1] ;  [2] ;  [4] ;  [1] ;  [3] ;  [1]
  1. The State Univ. of New Jersey, Piscataway, NJ (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. The John Hopkins Univ. Baltimore, MD (United States)
  4. Univ. of Colorado, Boulder, CO (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 1530-6984; R&D Project: MA015MACA; KC0201010
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 15; Journal Issue: 12; Journal ID: ISSN 1530-6984
American Chemical Society
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; topological insulator; molecular beam epitaxy; heterostructure; thin films; quantum Hall effect
OSTI Identifier: