skip to main content

DOE PAGESDOE PAGES

Title: Octonary resistance states in La 0.7Sr 0.3MnO 3/BaTiO 3/La 0.7Sr 0.3MnO 3 multiferroic tunnel junctions

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La 0.7Sr 0.3MnO 3/BaTiO 3/La 0.7Sr 0.3MnO 3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO 3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.
Authors:
;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1] ;  [3] ;  [4]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Univ. of Science and Technology of China, Hefe (People's Republic of China)
  3. Pennsylvania State Univ., University Park, PA (United States)
  4. Univ. of Science and Technology of China, Hefe (People's Republic of China); Nanjing Univ., Nanjing (China)
Publication Date:
Report Number(s):
BNL-111839-2016-JA
Journal ID: ISSN 2199-160X; R&D Project: MA015MACA; KC0201010
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 1; Journal Issue: 11; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1240697

Yue -Wei Yin, Tao, Jing, Huang, Wei -Chuan, Liu, Yu -Kuai, Yang, Sheng -Wei, Dong, Si -Ning, Zhu, Yi -Mei, Li, Qi, and Li, Xiao -Guang. Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions. United States: N. p., Web. doi:10.1002/aelm.201500183.
Yue -Wei Yin, Tao, Jing, Huang, Wei -Chuan, Liu, Yu -Kuai, Yang, Sheng -Wei, Dong, Si -Ning, Zhu, Yi -Mei, Li, Qi, & Li, Xiao -Guang. Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions. United States. doi:10.1002/aelm.201500183.
Yue -Wei Yin, Tao, Jing, Huang, Wei -Chuan, Liu, Yu -Kuai, Yang, Sheng -Wei, Dong, Si -Ning, Zhu, Yi -Mei, Li, Qi, and Li, Xiao -Guang. 2015. "Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions". United States. doi:10.1002/aelm.201500183. https://www.osti.gov/servlets/purl/1240697.
@article{osti_1240697,
title = {Octonary resistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions},
author = {Yue -Wei Yin and Tao, Jing and Huang, Wei -Chuan and Liu, Yu -Kuai and Yang, Sheng -Wei and Dong, Si -Ning and Zhu, Yi -Mei and Li, Qi and Li, Xiao -Guang},
abstractNote = {General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.},
doi = {10.1002/aelm.201500183},
journal = {Advanced Electronic Materials},
number = 11,
volume = 1,
place = {United States},
year = {2015},
month = {10}
}