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Title: Structural disorder and magnetism in the spin-gapless semiconductor CoFeCrAl

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-04ER46152
Type:
Published Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 6 Journal Issue: 5; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1240306
Alternate Identifier(s):
OSTI ID: 1421068

Choudhary, Renu, Kharel, Parashu, Valloppilly, Shah R., Jin, Yunlong, O’Connell, Andrew, Huh, Yung, Gilbert, Simeon, Kashyap, Arti, Sellmyer, D. J., and Skomski, Ralph. Structural disorder and magnetism in the spin-gapless semiconductor CoFeCrAl. United States: N. p., Web. doi:10.1063/1.4943306.
Choudhary, Renu, Kharel, Parashu, Valloppilly, Shah R., Jin, Yunlong, O’Connell, Andrew, Huh, Yung, Gilbert, Simeon, Kashyap, Arti, Sellmyer, D. J., & Skomski, Ralph. Structural disorder and magnetism in the spin-gapless semiconductor CoFeCrAl. United States. doi:10.1063/1.4943306.
Choudhary, Renu, Kharel, Parashu, Valloppilly, Shah R., Jin, Yunlong, O’Connell, Andrew, Huh, Yung, Gilbert, Simeon, Kashyap, Arti, Sellmyer, D. J., and Skomski, Ralph. 2016. "Structural disorder and magnetism in the spin-gapless semiconductor CoFeCrAl". United States. doi:10.1063/1.4943306.
@article{osti_1240306,
title = {Structural disorder and magnetism in the spin-gapless semiconductor CoFeCrAl},
author = {Choudhary, Renu and Kharel, Parashu and Valloppilly, Shah R. and Jin, Yunlong and O’Connell, Andrew and Huh, Yung and Gilbert, Simeon and Kashyap, Arti and Sellmyer, D. J. and Skomski, Ralph},
abstractNote = {},
doi = {10.1063/1.4943306},
journal = {AIP Advances},
number = 5,
volume = 6,
place = {United States},
year = {2016},
month = {5}
}