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Title: Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-03ER46028
Type:
Publisher's Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 27; Journal Issue: 15; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1240195

Knapp, T. J., Mohr, R. T., Li, Yize Stephanie, Thorgrimsson, Brandur, Foote, Ryan H., Wu, Xian, Ward, Daniel R., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., and Eriksson, M. A.. Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane. United Kingdom: N. p., Web. doi:10.1088/0957-4484/27/15/154002.
Knapp, T. J., Mohr, R. T., Li, Yize Stephanie, Thorgrimsson, Brandur, Foote, Ryan H., Wu, Xian, Ward, Daniel R., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., & Eriksson, M. A.. Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane. United Kingdom. doi:10.1088/0957-4484/27/15/154002.
Knapp, T. J., Mohr, R. T., Li, Yize Stephanie, Thorgrimsson, Brandur, Foote, Ryan H., Wu, Xian, Ward, Daniel R., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., and Eriksson, M. A.. 2016. "Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane". United Kingdom. doi:10.1088/0957-4484/27/15/154002.
@article{osti_1240195,
title = {Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane},
author = {Knapp, T. J. and Mohr, R. T. and Li, Yize Stephanie and Thorgrimsson, Brandur and Foote, Ryan H. and Wu, Xian and Ward, Daniel R. and Savage, D. E. and Lagally, M. G. and Friesen, Mark and Coppersmith, S. N. and Eriksson, M. A.},
abstractNote = {},
doi = {10.1088/0957-4484/27/15/154002},
journal = {Nanotechnology},
number = 15,
volume = 27,
place = {United Kingdom},
year = {2016},
month = {3}
}