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Title: Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Abstract

Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). Finally, the electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ~0.4 eV at the monolayer MoS2 edges.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Institute of Standards and Technology (NIST); US Department of the Navy, Office of Naval Research (ONR)
OSTI Identifier:
1240188
Grant/Contract Number:  
70NANB14H012; FG02-09ER16109; AC02-06CH11357; SC0001059; N00014-14-1-0669; DMR01121262
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
ENGLISH
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; transition metal dichalcogenide; silicon carbide; scanning tunneling microscopy; synchrotron x-ray scattering; chemical vapor deposition; van der Waals heterostructure

Citation Formats

Liu, Xiaolong, Balla, Itamar, Bergeron, Hadallia, Campbell, Gavin P., Bedzyk, Michael J., and Hersam, Mark C. Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene. United States: N. p., 2015. Web. doi:10.1021/acsnano.5b06398.
Liu, Xiaolong, Balla, Itamar, Bergeron, Hadallia, Campbell, Gavin P., Bedzyk, Michael J., & Hersam, Mark C. Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene. United States. https://doi.org/10.1021/acsnano.5b06398
Liu, Xiaolong, Balla, Itamar, Bergeron, Hadallia, Campbell, Gavin P., Bedzyk, Michael J., and Hersam, Mark C. Fri . "Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene". United States. https://doi.org/10.1021/acsnano.5b06398. https://www.osti.gov/servlets/purl/1240188.
@article{osti_1240188,
title = {Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene},
author = {Liu, Xiaolong and Balla, Itamar and Bergeron, Hadallia and Campbell, Gavin P. and Bedzyk, Michael J. and Hersam, Mark C.},
abstractNote = {Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). Finally, the electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ~0.4 eV at the monolayer MoS2 edges.},
doi = {10.1021/acsnano.5b06398},
journal = {ACS Nano},
number = 1,
volume = 10,
place = {United States},
year = {Fri Nov 13 00:00:00 EST 2015},
month = {Fri Nov 13 00:00:00 EST 2015}
}

Journal Article:
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Cited by: 162 works
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Figures / Tables:

Figure 1 Figure 1: CVD-grown MoS2 on EG at different conditions. (a) UHV STM image of EG before growth of MoS2, showing a typical rotational grain boundary on EG (Vsample = −0.1 V, Itunneling = 0.4 nA). EG lattice and underlying SiC (6$\sqrt{3}$ x 6$\sqrt{3}$)R30° reconstruction are clearly observed. (b) AFM heightmore » and (c) phase images of MoS2/EG grown at 43 Torr. Line profiles show monolayer MoS2 (green) and graphene (red) thicknesses. The contrast between bilayer and monolayer regions of EG is more obvious in the phase image. (d) Extraction of edge orientations of MoS2 crystals in (b), showing two predominant registrations of MoS2 on EG. (e) AFM images of MoS2/EG grown at 50 Torr and (f) 100 Torr, showing multilayer growth and larger crystal domain size. The interface between EG and MoS2 is highlighted in red.« less

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