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Title: Tuning Electrical Properties through Control of TiSe2 Thickness in (BiSe)1+δ (TiSe2)n Compounds

Abstract

A series of (BiSe)1+δ(TiSe2)n compounds where n was varied from two to four were synthesized and electrically characterized to explore the extent of charge transfer from the BiSe layer to the TiSe2 layers. These kinetically stable heterostructures were prepared using the modulated elemental reactants (MER) method, in which thin amorphous elemental layers are deposited in an order that mimics the nanostructure of the desired product. X-ray diffraction (XRD), X-ray area diffraction, and scanning transmission electron microscopy (STEM) data show that the precursors formed the desired products. Specular diffraction scans contain only 00l reflections, indicating that the compounds are crystallographically aligned with the c-axis perpendicular to the substrate. The c-axis lattice parameter increases by 0.604(3) nm with each additional TiSe2 layer. In-plane diffraction scans contain reflections that can be indexed as the (hk0) of the BiSe and TiSe2 constituents. Area diffraction scans are also consistent with the samples containing only BiSe and TiSe2 constituents. Rietveld refinement of the 00l XRD data was used to determine the positions of atomic planes along the c-axis. STEM data supports the structures suggested by the diffraction data and associated refinements but also shows that antiphase boundaries occur approximately 1/3 of the time in the BiSemore » layers. All samples showed metallic behavior for the temperature-dependent electrical resistivity between 20 K and room temperature. Electrical measurements indicated that charge is transferred from the BiSe layer to the TiSe2 layer. The measured Hall coefficients were all negative indicating that electrons are the majority carrier and are systematically decreased as n was increased. Assuming a single parabolic band model, carrier concentration decreased when the number of TiSe2 layers is increased, suggesting that the amount of charge donated by the BiSe layer to the TiSe2 layers is constant. Seebeck coefficients were negative for all of the (BiSe)1+δ(TiSe2)n compounds studied, indicating that electrons are the majority carrier, and decreased as n increased. Lastly, the effective mass of the carriers was calculated to be 5–6 me for the series of compounds.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Univ. of Oregon, Eugene, OR (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1240170
Grant/Contract Number:  
AC02-06CH11357; DMR-1266217; CHE1102637
Resource Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 27; Journal Issue: 17; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
ENGLISH
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Wood, Suzannah R., Merrill, Devin R., Falmbigl, Matthias, Moore, Daniel B., Ditto, Jeffrey, Esters, Marco, and Johnson, David C.. Tuning Electrical Properties through Control of TiSe2 Thickness in (BiSe)1+δ (TiSe2)n Compounds. United States: N. p., 2015. Web. https://doi.org/10.1021/acs.chemmater.5b02572.
Wood, Suzannah R., Merrill, Devin R., Falmbigl, Matthias, Moore, Daniel B., Ditto, Jeffrey, Esters, Marco, & Johnson, David C.. Tuning Electrical Properties through Control of TiSe2 Thickness in (BiSe)1+δ (TiSe2)n Compounds. United States. https://doi.org/10.1021/acs.chemmater.5b02572
Wood, Suzannah R., Merrill, Devin R., Falmbigl, Matthias, Moore, Daniel B., Ditto, Jeffrey, Esters, Marco, and Johnson, David C.. Wed . "Tuning Electrical Properties through Control of TiSe2 Thickness in (BiSe)1+δ (TiSe2)n Compounds". United States. https://doi.org/10.1021/acs.chemmater.5b02572. https://www.osti.gov/servlets/purl/1240170.
@article{osti_1240170,
title = {Tuning Electrical Properties through Control of TiSe2 Thickness in (BiSe)1+δ (TiSe2)n Compounds},
author = {Wood, Suzannah R. and Merrill, Devin R. and Falmbigl, Matthias and Moore, Daniel B. and Ditto, Jeffrey and Esters, Marco and Johnson, David C.},
abstractNote = {A series of (BiSe)1+δ(TiSe2)n compounds where n was varied from two to four were synthesized and electrically characterized to explore the extent of charge transfer from the BiSe layer to the TiSe2 layers. These kinetically stable heterostructures were prepared using the modulated elemental reactants (MER) method, in which thin amorphous elemental layers are deposited in an order that mimics the nanostructure of the desired product. X-ray diffraction (XRD), X-ray area diffraction, and scanning transmission electron microscopy (STEM) data show that the precursors formed the desired products. Specular diffraction scans contain only 00l reflections, indicating that the compounds are crystallographically aligned with the c-axis perpendicular to the substrate. The c-axis lattice parameter increases by 0.604(3) nm with each additional TiSe2 layer. In-plane diffraction scans contain reflections that can be indexed as the (hk0) of the BiSe and TiSe2 constituents. Area diffraction scans are also consistent with the samples containing only BiSe and TiSe2 constituents. Rietveld refinement of the 00l XRD data was used to determine the positions of atomic planes along the c-axis. STEM data supports the structures suggested by the diffraction data and associated refinements but also shows that antiphase boundaries occur approximately 1/3 of the time in the BiSe layers. All samples showed metallic behavior for the temperature-dependent electrical resistivity between 20 K and room temperature. Electrical measurements indicated that charge is transferred from the BiSe layer to the TiSe2 layer. The measured Hall coefficients were all negative indicating that electrons are the majority carrier and are systematically decreased as n was increased. Assuming a single parabolic band model, carrier concentration decreased when the number of TiSe2 layers is increased, suggesting that the amount of charge donated by the BiSe layer to the TiSe2 layers is constant. Seebeck coefficients were negative for all of the (BiSe)1+δ(TiSe2)n compounds studied, indicating that electrons are the majority carrier, and decreased as n increased. Lastly, the effective mass of the carriers was calculated to be 5–6 me for the series of compounds.},
doi = {10.1021/acs.chemmater.5b02572},
journal = {Chemistry of Materials},
number = 17,
volume = 27,
place = {United States},
year = {2015},
month = {8}
}

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