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Title: Intrinsic polarization control in rectangular GaN nanowire lasers

Abstract

In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm 2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.

Authors:
 [1];  [2];  [2];  [2];  [2];  [1];  [2]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1240100
Report Number(s):
SAND2016-1212J
Journal ID: ISSN 2040-3364; NANOHL; 619290
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 8; Journal Issue: 10; Journal ID: ISSN 2040-3364
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Li, Changyi, Liu, Sheng, Luk, Ting S., Figiel, Jeffrey J., Brener, Igal, Brueck, S. R. J., and Wang, George T. Intrinsic polarization control in rectangular GaN nanowire lasers. United States: N. p., 2016. Web. doi:10.1039/C5NR07504A.
Li, Changyi, Liu, Sheng, Luk, Ting S., Figiel, Jeffrey J., Brener, Igal, Brueck, S. R. J., & Wang, George T. Intrinsic polarization control in rectangular GaN nanowire lasers. United States. doi:10.1039/C5NR07504A.
Li, Changyi, Liu, Sheng, Luk, Ting S., Figiel, Jeffrey J., Brener, Igal, Brueck, S. R. J., and Wang, George T. Mon . "Intrinsic polarization control in rectangular GaN nanowire lasers". United States. doi:10.1039/C5NR07504A. https://www.osti.gov/servlets/purl/1240100.
@article{osti_1240100,
title = {Intrinsic polarization control in rectangular GaN nanowire lasers},
author = {Li, Changyi and Liu, Sheng and Luk, Ting S. and Figiel, Jeffrey J. and Brener, Igal and Brueck, S. R. J. and Wang, George T.},
abstractNote = {In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.},
doi = {10.1039/C5NR07504A},
journal = {Nanoscale},
number = 10,
volume = 8,
place = {United States},
year = {2016},
month = {2}
}

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    Works referencing / citing this record:

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