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Title: Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Avogy Inc., San Jose, CA (United States)
Publication Date:
Report Number(s):
SAND-2015-5786J
Journal ID: ISSN 0018-9499; 618536
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 6; Journal ID: ISSN 0018-9499
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; power; electronics; power devices; wide-bandgap; gallium nitride; reliability; displacement damage
OSTI Identifier:
1239987

King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., Wampler, W. R., Kizilyalli, I. C., Bour, D. P., Aktas, O., Nie, H., Disney, D., Wierer, Jr., J., Allerman, A. A., Moseley, M. W., and Kaplar, R. J.. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes. United States: N. p., Web. doi:10.1109/tns.2015.2480071.
King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., Wampler, W. R., Kizilyalli, I. C., Bour, D. P., Aktas, O., Nie, H., Disney, D., Wierer, Jr., J., Allerman, A. A., Moseley, M. W., & Kaplar, R. J.. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes. United States. doi:10.1109/tns.2015.2480071.
King, M. P., Armstrong, A. M., Dickerson, J. R., Vizkelethy, G., Fleming, R. M., Campbell, J., Wampler, W. R., Kizilyalli, I. C., Bour, D. P., Aktas, O., Nie, H., Disney, D., Wierer, Jr., J., Allerman, A. A., Moseley, M. W., and Kaplar, R. J.. 2015. "Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes". United States. doi:10.1109/tns.2015.2480071. https://www.osti.gov/servlets/purl/1239987.
@article{osti_1239987,
title = {Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes},
author = {King, M. P. and Armstrong, A. M. and Dickerson, J. R. and Vizkelethy, G. and Fleming, R. M. and Campbell, J. and Wampler, W. R. and Kizilyalli, I. C. and Bour, D. P. and Aktas, O. and Nie, H. and Disney, D. and Wierer, Jr., J. and Allerman, A. A. and Moseley, M. W. and Kaplar, R. J.},
abstractNote = {Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.},
doi = {10.1109/tns.2015.2480071},
journal = {IEEE Transactions on Nuclear Science},
number = 6,
volume = 62,
place = {United States},
year = {2015},
month = {10}
}