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Title: Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy

Abstract

Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Thus, across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.

Authors:
 [1];  [2]
+ Show Author Affiliations
  1. The Pennsylvania State Univ., University Park, PA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1239984
Report Number(s):
SAND-2015-10886J
Journal ID: ISSN 0960-1317; 617639
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Additional Journal Information:
Journal Volume: 26; Journal Issue: 2; Journal ID: ISSN 0960-1317
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; aluminum nitride; microelectromechanical systems; Piezoelectric transducers; Raman scattering; stress measurement

Citation Formats

Choi, Sukwon, and Griffin, Benjamin A. Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy. United States: N. p., 2016. Web. doi:10.1088/0960-1317/26/2/025009.
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Choi, Sukwon, & Griffin, Benjamin A. Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy. United States. https://doi.org/10.1088/0960-1317/26/2/025009
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Choi, Sukwon, and Griffin, Benjamin A. Wed . "Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy". United States. https://doi.org/10.1088/0960-1317/26/2/025009. https://www.osti.gov/servlets/purl/1239984.
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@article{osti_1239984,
title = {Local residual stress monitoring of aluminum nitride MEMS using UV micro-Raman spectroscopy},
author = {Choi, Sukwon and Griffin, Benjamin A.},
abstractNote = {Localized stress variation in aluminum nitride (AlN) sputtered on patterned metallization has been monitored through the use of UV micro-Raman spectroscopy. This technique utilizing 325 nm laser excitation allows detection of the AlN E2(high) phonon mode in the presence of metal electrodes beneath the AlN layer with a high spatial resolution of less than 400 nm. The AlN film stress shifted 400 MPa from regions where AlN was deposited over a bottom metal electrode versus silicon dioxide. Thus, across wafer stress variations were also investigated showing that wafer level stress metrology, for example using wafer curvature measurements, introduces large uncertainties for predicting the impact of AlN residual stress on the device performance.},
doi = {10.1088/0960-1317/26/2/025009},
journal = {Journal of Micromechanics and Microengineering. Structures, Devices and Systems},
number = 2,
volume = 26,
place = {United States},
year = {Wed Jan 06 00:00:00 EST 2016},
month = {Wed Jan 06 00:00:00 EST 2016}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1088/0960-1317/26/2/025009
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    Works referencing / citing this record:

    Amorphous Silicon Self‐Rolling Micro Electromechanical Systems: From Residual Stress Control to Complex 3D Structures
    journal, August 2019

    • Pinto, Rui M. R.; Chu, Virginia; Conde, João Pedro
    • Advanced Engineering Materials, Vol. 21, Issue 9
    • DOI: 10.1002/adem.201900663
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