Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies
Abstract
Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states may be harnessed for the realization of qubits. As a result, the strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.
- Authors:
-
- Univ. of Chicago, Chicago, IL (United States)
- Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- OSTI Identifier:
- 1239598
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; electronic structure; Marco Govoni & Giulia Galli
Citation Formats
Seo, Hosung, Govoni, Marco, and Galli, Giulia. Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies. United States: N. p., 2016.
Web. doi:10.1038/srep20803.
Seo, Hosung, Govoni, Marco, & Galli, Giulia. Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies. United States. doi:10.1038/srep20803.
Seo, Hosung, Govoni, Marco, and Galli, Giulia. Mon .
"Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies". United States. doi:10.1038/srep20803. https://www.osti.gov/servlets/purl/1239598.
@article{osti_1239598,
title = {Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies},
author = {Seo, Hosung and Govoni, Marco and Galli, Giulia},
abstractNote = {Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states may be harnessed for the realization of qubits. As a result, the strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.},
doi = {10.1038/srep20803},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {2016},
month = {2}
}
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