Current–voltage characteristics of organic heterostructure devices with insulating spacer layers
Abstract
The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and we discuss relevant experimental data.
- Authors:
-
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Shandong Univ., Jinan (China)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of Minnesota, Minneapolis, MN (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1239309
- Report Number(s):
- LA-UR-14-28714
Journal ID: ISSN 1566-1199
- Grant/Contract Number:
- AC52-06NA25396
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Organic Electronics
- Additional Journal Information:
- Journal Volume: 24; Journal Issue: C; Journal ID: ISSN 1566-1199
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE; 36 MATERIALS SCIENCE; Material Science; Organic heterostructure; Insulating spacer layer; Current-voltage characteristics
Citation Formats
Yin, Sun, Nie, Wanyi, Mohite, Aditya D., Saxena, Avadh, Smith, Darryl L., and Ruden, P. Paul. Current–voltage characteristics of organic heterostructure devices with insulating spacer layers. United States: N. p., 2015.
Web. doi:10.1016/j.orgel.2015.05.018.
Yin, Sun, Nie, Wanyi, Mohite, Aditya D., Saxena, Avadh, Smith, Darryl L., & Ruden, P. Paul. Current–voltage characteristics of organic heterostructure devices with insulating spacer layers. United States. https://doi.org/10.1016/j.orgel.2015.05.018
Yin, Sun, Nie, Wanyi, Mohite, Aditya D., Saxena, Avadh, Smith, Darryl L., and Ruden, P. Paul. Thu .
"Current–voltage characteristics of organic heterostructure devices with insulating spacer layers". United States. https://doi.org/10.1016/j.orgel.2015.05.018. https://www.osti.gov/servlets/purl/1239309.
@article{osti_1239309,
title = {Current–voltage characteristics of organic heterostructure devices with insulating spacer layers},
author = {Yin, Sun and Nie, Wanyi and Mohite, Aditya D. and Saxena, Avadh and Smith, Darryl L. and Ruden, P. Paul},
abstractNote = {The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and we discuss relevant experimental data.},
doi = {10.1016/j.orgel.2015.05.018},
journal = {Organic Electronics},
number = C,
volume = 24,
place = {United States},
year = {Thu May 14 00:00:00 EDT 2015},
month = {Thu May 14 00:00:00 EDT 2015}
}
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