2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Roy, Tania; Tosun, Mahmut; Hettick, Mark; Ahn, Geun Ho; Hu, Chenming; Javey, Ali

doi:10.1063/1.4942647

Title: 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Authors:

Roy, Tania ^[1]; Tosun, Mahmut ^[1]; Hettick, Mark ^[1]; Ahn, Geun Ho ^[1]; Hu, Chenming ^[2]; Javey, Ali ^[1]

Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Berkeley Sensor and Actuator Center, University of California, Berkeley, California 94720, USA
Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA

Publication Date:: Wed Feb 24 00:00:00 EST 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1239172

Grant/Contract Number:: AC02-05CH11231; SC0004993

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 8; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Roy, Tania, Tosun, Mahmut, Hettick, Mark, Ahn, Geun Ho, Hu, Chenming, and Javey, Ali. 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4942647.

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                    Roy, Tania, Tosun, Mahmut, Hettick, Mark, Ahn, Geun Ho, Hu, Chenming, & Javey, Ali. 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures.  United States.  https://doi.org/10.1063/1.4942647

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                    Roy, Tania, Tosun, Mahmut, Hettick, Mark, Ahn, Geun Ho, Hu, Chenming, and Javey, Ali. Wed .  
"2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures".  United States.  https://doi.org/10.1063/1.4942647.

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@article{osti_1239172,

  title        = {2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures},

  author       = {Roy, Tania and Tosun, Mahmut and Hettick, Mark and Ahn, Geun Ho and Hu, Chenming and Javey, Ali},

  abstractNote = {},

  doi          = {10.1063/1.4942647},

  journal      = {Applied Physics Letters},

  number       = 8,

  volume       = 108,

  place        = {United States},

  year         = {Wed Feb 24 00:00:00 EST 2016},

  month        = {Wed Feb 24 00:00:00 EST 2016}

}

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Works referenced in this record:

Field-Effect Transistors Built from All Two-Dimensional Material Components
journal, May 2014

Roy, Tania; Tosun, Mahmut; Kang, Jeong Seuk
ACS Nano, Vol. 8, Issue 6
DOI: 10.1021/nn501723y

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
journal, June 2013

Knoll, Lars; Zhao, Qing-Tai; Nichau, Alexander
IEEE Electron Device Letters, Vol. 34, Issue 6
DOI: 10.1109/LED.2013.2258652

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
journal, June 2015

Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik
Nature Communications, Vol. 6, Issue 1
DOI: 10.1038/ncomms8311

Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy
journal, May 1999

Schlaf, R.; Pettenkofer, C.; Jaegermann, W.
Journal of Applied Physics, Vol. 85, Issue 9
DOI: 10.1063/1.370160

SnSe ₂ field-effect transistors with high drive current
journal, December 2013

Su, Yang; Ebrish, Mona A.; Olson, Eric J.
Applied Physics Letters, Vol. 103, Issue 26
DOI: 10.1063/1.4857495

Dual-Gated MoS ₂ /WSe ₂ van der Waals Tunnel Diodes and Transistors
journal, January 2015

Roy, Tania; Tosun, Mahmut; Cao, Xi
ACS Nano, Vol. 9, Issue 2
DOI: 10.1021/nn507278b

Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule
journal, March 1999

Schlaf, R.; Lang, O.; Pettenkofer, C.
Journal of Applied Physics, Vol. 85, Issue 5
DOI: 10.1063/1.369590

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
journal, August 2007

Woo Young Choi,
IEEE Electron Device Letters, Vol. 28, Issue 8
DOI: 10.1109/LED.2007.901273

Resonant tunnelling and negative differential conductance in graphene transistors
journal, April 2013

Britnell, L.; Gorbachev, R. V.; Geim, A. K.
Nature Communications, Vol. 4, Issue 1
DOI: 10.1038/ncomms2817

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe ₂
journal, July 2014

Desai, Sujay B.; Seol, Gyungseon; Kang, Jeong Seuk
Nano Letters, Vol. 14, Issue 8
DOI: 10.1021/nl501638a

CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing
journal, November 2011

Gandhi, Ramanathan; Chen, Zhixian; Singh, Navab
IEEE Electron Device Letters, Vol. 32, Issue 11
DOI: 10.1109/LED.2011.2165331

Limiting efficiency of silicon solar cells
journal, May 1984

Tiedje, T.; Yablonovitch, E.; Cody, G.D.
IEEE Transactions on Electron Devices, Vol. 31, Issue 5, p. 711-716
DOI: 10.1109/T-ED.1984.21594

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective
conference, December 2014

Huang, Qianqian
2014 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/IEDM.2014.7047044

Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
journal, May 2015

Zeng, Yuping; Kuo, Chien-I; Hsu, Chingyi
IEEE Transactions on Nanotechnology, Vol. 14, Issue 3
DOI: 10.1109/TNANO.2015.2419232

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
journal, April 2014

Fang, H.; Battaglia, C.; Carraro, C.
Proceedings of the National Academy of Sciences, Vol. 111, Issue 17
DOI: 10.1073/pnas.1405435111

A subthermionic tunnel field-effect transistor with an atomically thin channel
journal, September 2015

Sarkar, Deblina; Xie, Xuejun; Liu, Wei
Nature, Vol. 526, Issue 7571
DOI: 10.1038/nature15387

Band-Edge Steepness Obtained From Esaki/Backward Diode Current–Voltage Characteristics
journal, May 2014

Agarwal, Sapan; Yablonovitch, Eli
IEEE Transactions on Electron Devices, Vol. 61, Issue 5
DOI: 10.1109/TED.2014.2312731

Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature
journal, April 2011

Gandhi, Ramanathan; Chen, Zhixian; Singh, Navab
IEEE Electron Device Letters, Vol. 32, Issue 4
DOI: 10.1109/LED.2011.2106757

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment
journal, August 2015

Yan, Rusen; Fathipour, Sara; Han, Yimo
Nano Letters, Vol. 15, Issue 9
DOI: 10.1021/acs.nanolett.5b01792

Semiconducting Properties of Single Crystals of n ‐ and p ‐Type Tungsten Diselenide (WSe ₂ )
journal, September 1968

Upadhyayula, L. C.; Loferski, J. J.; Wold, A.
Journal of Applied Physics, Vol. 39, Issue 10
DOI: 10.1063/1.1655829

Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.
Nature Nanotechnology, Vol. 9, Issue 9
DOI: 10.1038/nnano.2014.150

Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage
conference, December 2008

Krishnamohan, Tejas; Kim, Donghyun
2008 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/IEDM.2008.4796845

Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance
conference, December 2008

Mayer, F.; Le Royer, C.; Damlencourt, J. -F.
2008 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/IEDM.2008.4796641

Ultrasonic spray pyrolysis deposition of SnSe and SnSe ₂ using a single spray solution
journal, January 2013

Narro-Rios, Jorge Sergio; Ramachandran, Manoj; Martínez-Escobar, Dalia
Journal of Semiconductors, Vol. 34, Issue 1
DOI: 10.1088/1674-4926/34/1/013001

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Title: 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Citation Formats

Field-Effect Transistors Built from All Two-Dimensional Material Components journal, May 2014

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors journal, June 2013

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures journal, June 2015

Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy journal, May 1999

SnSe 2 field-effect transistors with high drive current journal, December 2013

Dual-Gated MoS 2 /WSe 2 van der Waals Tunnel Diodes and Transistors journal, January 2015

Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule journal, March 1999

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec journal, August 2007

Resonant tunnelling and negative differential conductance in graphene transistors journal, April 2013

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe 2 journal, July 2014

CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing journal, November 2011

Limiting efficiency of silicon solar cells journal, May 1984

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective conference, December 2014

Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support journal, May 2015

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides journal, April 2014

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Band-Edge Steepness Obtained From Esaki/Backward Diode Current–Voltage Characteristics journal, May 2014

Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature journal, April 2011

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment journal, August 2015

Semiconducting Properties of Single Crystals of n ‐ and p ‐Type Tungsten Diselenide (WSe 2 ) journal, September 1968

Atomically thin p–n junctions with van der Waals heterointerfaces journal, August 2014

Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage conference, December 2008

Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance conference, December 2008

Ultrasonic spray pyrolysis deposition of SnSe and SnSe 2 using a single spray solution journal, January 2013

Field-Effect Transistors Built from All Two-Dimensional Material Components
journal, May 2014

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
journal, June 2013

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
journal, June 2015

Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy
journal, May 1999

SnSe ₂ field-effect transistors with high drive current
journal, December 2013

Dual-Gated MoS ₂ /WSe ₂ van der Waals Tunnel Diodes and Transistors
journal, January 2015

Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule
journal, March 1999

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
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Resonant tunnelling and negative differential conductance in graphene transistors
journal, April 2013

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe ₂
journal, July 2014

CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing
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Limiting efficiency of silicon solar cells
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