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Title: Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source–drain voltage and non-linear dependence on gate bias. Effects such as Fowler–Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15–20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2]
  1. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2015-0022J
Journal ID: ISSN 0957-4484; 558290
Grant/Contract Number:
AC04-94AL85000
Type:
Published Article
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 26; Journal Issue: 20; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY
OSTI Identifier:
1238970
Alternate Identifier(s):
OSTI ID: 1238972; OSTI ID: 1427208

Shirkhorshidian, A., Bishop, N. C., Dominguez, J., Grubbs, R. K., Wendt, J. R., Lilly, M. P., and Carroll, M. S.. Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants. United States: N. p., Web. doi:10.1088/0957-4484/26/20/205703.
Shirkhorshidian, A., Bishop, N. C., Dominguez, J., Grubbs, R. K., Wendt, J. R., Lilly, M. P., & Carroll, M. S.. Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants. United States. doi:10.1088/0957-4484/26/20/205703.
Shirkhorshidian, A., Bishop, N. C., Dominguez, J., Grubbs, R. K., Wendt, J. R., Lilly, M. P., and Carroll, M. S.. 2015. "Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants". United States. doi:10.1088/0957-4484/26/20/205703.
@article{osti_1238970,
title = {Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants},
author = {Shirkhorshidian, A. and Bishop, N. C. and Dominguez, J. and Grubbs, R. K. and Wendt, J. R. and Lilly, M. P. and Carroll, M. S.},
abstractNote = {We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source–drain voltage and non-linear dependence on gate bias. Effects such as Fowler–Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15–20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.},
doi = {10.1088/0957-4484/26/20/205703},
journal = {Nanotechnology},
number = 20,
volume = 26,
place = {United States},
year = {2015},
month = {4}
}