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Title: Influence of piezoelectric strain on the Raman spectra of BiFeO 3 films deposited on PMN-PT substrates

In this study, BiFeO 3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg 1/3Nb 2/3)O 3-0.28PbTiO 3 (PMN-PT) substrates with a conductive buffer layer (La 0.7Sr 0.3MnO 3 or SrRuO 3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO 3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [1]
  1. TU Bergakademie Freiberg, Freiberg (Germany)
  2. Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; piezoelectric fields; thin film structure; epitaxy; phonons; buffer layers
OSTI Identifier:
1238753