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Title: Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 10 3 the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2015-10479J
Journal ID: ISSN 0003-6951; APPLAB; 614665; TRN: US1600398
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; amplifiers; MODFETs; qubits; 1/f noise; visibility
OSTI Identifier:
1238671

Tracy, Lisa A., Luhman, Dwight R., Carr, Stephen M., Bishop, Nathaniel C., Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Lilly, Michael P., and Carroll, Malcolm S.. Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures. United States: N. p., Web. doi:10.1063/1.4941421.
Tracy, Lisa A., Luhman, Dwight R., Carr, Stephen M., Bishop, Nathaniel C., Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Lilly, Michael P., & Carroll, Malcolm S.. Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures. United States. doi:10.1063/1.4941421.
Tracy, Lisa A., Luhman, Dwight R., Carr, Stephen M., Bishop, Nathaniel C., Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Lilly, Michael P., and Carroll, Malcolm S.. 2016. "Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures". United States. doi:10.1063/1.4941421. https://www.osti.gov/servlets/purl/1238671.
@article{osti_1238671,
title = {Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures},
author = {Tracy, Lisa A. and Luhman, Dwight R. and Carr, Stephen M. and Bishop, Nathaniel C. and Ten Eyck, Gregory A. and Pluym, Tammy and Wendt, Joel R. and Lilly, Michael P. and Carroll, Malcolm S.},
abstractNote = {We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 103 the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.},
doi = {10.1063/1.4941421},
journal = {Applied Physics Letters},
number = 6,
volume = 108,
place = {United States},
year = {2016},
month = {2}
}