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Title: Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be consideredmore » indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.« less
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6] ;  [2] ;  [7] ;  [8]
  1. Univ. of Torino, Torino (Italy)
  2. ANSTO, Kirrawee, NSW (Austria)
  3. National Univ. of Singapore (Singapore)
  4. CNA, Sevilla (Spain)
  5. Ruder Boskovic Institute, Zagreb (Croatia)
  6. Univ. of Helsinki, Helsinki (Finland)
  7. International Atomic Energy Agency, Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary)
  8. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0168-583X; 607657
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Additional Journal Information:
Journal Volume: 119; Journal Issue: 50; Journal ID: ISSN 0168-583X
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
International Atomic Energy Agency
Country of Publication:
United States
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; DIB; damaging ion beam; PIB; probing ion beam; IBIC; ion beam induced charge; NIEL; non-ionizing energy loss; CCE; charge collection efficiency
OSTI Identifier: