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Title: Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S 2

Authors:
; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1238192

Racke, David A., Neupane, Mahesh R., and Monti, Oliver L. A.. Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S 2. United States: N. p., Web. doi:10.1103/PhysRevB.93.085309.
Racke, David A., Neupane, Mahesh R., & Monti, Oliver L. A.. Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S 2. United States. doi:10.1103/PhysRevB.93.085309.
Racke, David A., Neupane, Mahesh R., and Monti, Oliver L. A.. 2016. "Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S 2". United States. doi:10.1103/PhysRevB.93.085309.
@article{osti_1238192,
title = {Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S 2},
author = {Racke, David A. and Neupane, Mahesh R. and Monti, Oliver L. A.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.085309},
journal = {Physical Review B},
number = 8,
volume = 93,
place = {United States},
year = {2016},
month = {2}
}