Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

Miller, Mary A.; Tangyunyong, Paiboon

doi:10.1063/1.4939305

Title: Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

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Abstract

In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].

Authors:

Miller, Mary A. ^[1]; Tangyunyong, Paiboon ^[1]; Edward I. Cole, Jr.

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Tue Jan 12 00:00:00 EST 2016

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1237673

Alternate Identifier(s):: OSTI ID: 1421086

Report Number(s):: SAND-2015-5646J
Journal ID: ISSN 0021-8979; JAPIAU; 597016

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 119; Journal Issue: 2; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; light emitting diodes; dislocations; transmission electron microscopy; III-V semiconductors; ultraviolet light

Citation Formats


                    Miller, Mary A., Tangyunyong, Paiboon, and Edward I. Cole, Jr. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4939305.

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                    Miller, Mary A., Tangyunyong, Paiboon, & Edward I. Cole, Jr. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques.  United States.  https://doi.org/10.1063/1.4939305

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                    Miller, Mary A., Tangyunyong, Paiboon, and Edward I. Cole, Jr. Tue .  
"Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques".  United States.  https://doi.org/10.1063/1.4939305.  https://www.osti.gov/servlets/purl/1237673.

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@article{osti_1237673,

  title        = {Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques},

  author       = {Miller, Mary A. and Tangyunyong, Paiboon and Edward I. Cole, Jr.},

  abstractNote = {In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].},

  doi          = {10.1063/1.4939305},

  journal      = {Journal of Applied Physics},

  number       = 2,

  volume       = 119,

  place        = {United States},

  year         = {Tue Jan 12 00:00:00 EST 2016},

  month        = {Tue Jan 12 00:00:00 EST 2016}

}

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