skip to main content

DOE PAGESDOE PAGES

Title: Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.
Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2015-5520J
Journal ID: ISSN 1938-6737; 594850
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
ECS Transactions (Online)
Additional Journal Information:
Journal Name: ECS Transactions (Online); Journal Volume: 69; Journal Issue: 5; Journal ID: ISSN 1938-6737
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1237669

Gao, Xujiao, Mamaluy, Denis, Mickel, Patrick R., and Marinella, Matthew. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors. United States: N. p., Web. doi:10.1149/06905.0183ecst.
Gao, Xujiao, Mamaluy, Denis, Mickel, Patrick R., & Marinella, Matthew. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors. United States. doi:10.1149/06905.0183ecst.
Gao, Xujiao, Mamaluy, Denis, Mickel, Patrick R., and Marinella, Matthew. 2015. "Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors". United States. doi:10.1149/06905.0183ecst. https://www.osti.gov/servlets/purl/1237669.
@article{osti_1237669,
title = {Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors},
author = {Gao, Xujiao and Mamaluy, Denis and Mickel, Patrick R. and Marinella, Matthew},
abstractNote = {In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.},
doi = {10.1149/06905.0183ecst},
journal = {ECS Transactions (Online)},
number = 5,
volume = 69,
place = {United States},
year = {2015},
month = {9}
}