Nanoscale deformation analysis with high-resolution transmission electron microscopy and digital image correlation
Abstract
We present an application of the digital image correlation (DIC) method to high-resolution transmission electron microscopy (HRTEM) images for nanoscale deformation analysis. The combination of DIC and HRTEM offers both the ultrahigh spatial resolution and high displacement detection sensitivity that are not possible with other microscope-based DIC techniques. We demonstrate the accuracy and utility of the HRTEM-DIC technique through displacement and strain analysis on amorphous silicon. Two types of error sources resulting from the transmission electron microscopy (TEM) image noise and electromagnetic-lens distortions are quantitatively investigated via rigid-body translation experiments. The local and global DIC approaches are applied for the analysis of diffusion- and reaction-induced deformation fields in electrochemically lithiated amorphous silicon. As a result, the DIC technique coupled with HRTEM provides a new avenue for the deformation analysis of materials at the nanometer length scales.
- Authors:
-
- Georgia Inst. of Technology, Atlanta, GA (United States)
- Univ. of Pittsburgh, Pittsburgh, PA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1237660
- Report Number(s):
- SAND-2015-4991J
Journal ID: ISSN 0021-8936; 594412
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Mechanics
- Additional Journal Information:
- Journal Volume: 82; Journal Issue: 12; Journal ID: ISSN 0021-8936
- Publisher:
- ASME
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; deformation; resolution (optics); nanoscale phenomena; displacement; errors; transmission electron microscopy; noise (sound); lenses (optics)
Citation Formats
Wang, Xueju, Pan, Zhipeng, Fan, Feifei, Wang, Jiangwei, Liu, Yang, Mao, Scott X., Zhu, Ting, and Xia, Shuman. Nanoscale deformation analysis with high-resolution transmission electron microscopy and digital image correlation. United States: N. p., 2015.
Web. doi:10.1115/1.4031332.
Wang, Xueju, Pan, Zhipeng, Fan, Feifei, Wang, Jiangwei, Liu, Yang, Mao, Scott X., Zhu, Ting, & Xia, Shuman. Nanoscale deformation analysis with high-resolution transmission electron microscopy and digital image correlation. United States. https://doi.org/10.1115/1.4031332
Wang, Xueju, Pan, Zhipeng, Fan, Feifei, Wang, Jiangwei, Liu, Yang, Mao, Scott X., Zhu, Ting, and Xia, Shuman. Thu .
"Nanoscale deformation analysis with high-resolution transmission electron microscopy and digital image correlation". United States. https://doi.org/10.1115/1.4031332. https://www.osti.gov/servlets/purl/1237660.
@article{osti_1237660,
title = {Nanoscale deformation analysis with high-resolution transmission electron microscopy and digital image correlation},
author = {Wang, Xueju and Pan, Zhipeng and Fan, Feifei and Wang, Jiangwei and Liu, Yang and Mao, Scott X. and Zhu, Ting and Xia, Shuman},
abstractNote = {We present an application of the digital image correlation (DIC) method to high-resolution transmission electron microscopy (HRTEM) images for nanoscale deformation analysis. The combination of DIC and HRTEM offers both the ultrahigh spatial resolution and high displacement detection sensitivity that are not possible with other microscope-based DIC techniques. We demonstrate the accuracy and utility of the HRTEM-DIC technique through displacement and strain analysis on amorphous silicon. Two types of error sources resulting from the transmission electron microscopy (TEM) image noise and electromagnetic-lens distortions are quantitatively investigated via rigid-body translation experiments. The local and global DIC approaches are applied for the analysis of diffusion- and reaction-induced deformation fields in electrochemically lithiated amorphous silicon. As a result, the DIC technique coupled with HRTEM provides a new avenue for the deformation analysis of materials at the nanometer length scales.},
doi = {10.1115/1.4031332},
journal = {Journal of Applied Mechanics},
number = 12,
volume = 82,
place = {United States},
year = {Thu Sep 10 00:00:00 EDT 2015},
month = {Thu Sep 10 00:00:00 EDT 2015}
}
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