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Title: Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

Abstract

In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated.more » Putting this all together, we present a robust universal gate set for quantum computation.« less

Authors:
 [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1184482
Alternate Identifier(s):
OSTI ID: 1212222; OSTI ID: 1237658
Report Number(s):
SAND-2014-18568J; SAND-2015-4490J
Journal ID: ISSN 1098-0121; 540377
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 92; Journal Issue: 08; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Witzel, Wayne, Montano, Ines, Muller, Richard P., and Carroll, Malcolm S. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.92.081407.
Witzel, Wayne, Montano, Ines, Muller, Richard P., & Carroll, Malcolm S. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon. United States. https://doi.org/10.1103/PhysRevB.92.081407
Witzel, Wayne, Montano, Ines, Muller, Richard P., and Carroll, Malcolm S. Wed . "Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon". United States. https://doi.org/10.1103/PhysRevB.92.081407. https://www.osti.gov/servlets/purl/1184482.
@article{osti_1184482,
title = {Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon},
author = {Witzel, Wayne and Montano, Ines and Muller, Richard P. and Carroll, Malcolm S.},
abstractNote = {In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.},
doi = {10.1103/PhysRevB.92.081407},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 08,
volume = 92,
place = {United States},
year = {Wed Aug 19 00:00:00 EDT 2015},
month = {Wed Aug 19 00:00:00 EDT 2015}
}

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Works referencing / citing this record:

Logical Qubit in a Linear Array of Semiconductor Quantum Dots
journal, June 2018


A Silicon Surface Code Architecture Resilient Against Leakage Errors
journal, December 2019


High-fidelity quantum gates in Si/SiGe double quantum dots
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A Silicon Surface Code Architecture Resilient Against Leakage Errors
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