Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon
Abstract
In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated.more »
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1184482
- Alternate Identifier(s):
- OSTI ID: 1212222; OSTI ID: 1237658
- Report Number(s):
- SAND-2014-18568J; SAND-2015-4490J
Journal ID: ISSN 1098-0121; 540377
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 92; Journal Issue: 08; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Witzel, Wayne, Montano, Ines, Muller, Richard P., and Carroll, Malcolm S. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.081407.
Witzel, Wayne, Montano, Ines, Muller, Richard P., & Carroll, Malcolm S. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon. United States. https://doi.org/10.1103/PhysRevB.92.081407
Witzel, Wayne, Montano, Ines, Muller, Richard P., and Carroll, Malcolm S. Wed .
"Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon". United States. https://doi.org/10.1103/PhysRevB.92.081407. https://www.osti.gov/servlets/purl/1184482.
@article{osti_1184482,
title = {Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon},
author = {Witzel, Wayne and Montano, Ines and Muller, Richard P. and Carroll, Malcolm S.},
abstractNote = {In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.},
doi = {10.1103/PhysRevB.92.081407},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 08,
volume = 92,
place = {United States},
year = {Wed Aug 19 00:00:00 EDT 2015},
month = {Wed Aug 19 00:00:00 EDT 2015}
}
Web of Science
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