In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation
Abstract
Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. Furthermore, the obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.
- Authors:
-
- National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States); Univ. of Maryland, College Park, MD (United States)
- National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States)
- Australian National Univ., Canberra (Australia)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1237635
- Alternate Identifier(s):
- OSTI ID: 1234065
- Grant/Contract Number:
- AC05-00OR22725; 7620
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 92; Journal Issue: 21; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Gerbig, Yvonne B., Michaels, C. A., Bradby, Jodie E., Haberl, Bianca, and Cook, Robert F. In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.214110.
Gerbig, Yvonne B., Michaels, C. A., Bradby, Jodie E., Haberl, Bianca, & Cook, Robert F. In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation. United States. https://doi.org/10.1103/PhysRevB.92.214110
Gerbig, Yvonne B., Michaels, C. A., Bradby, Jodie E., Haberl, Bianca, and Cook, Robert F. Thu .
"In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation". United States. https://doi.org/10.1103/PhysRevB.92.214110. https://www.osti.gov/servlets/purl/1237635.
@article{osti_1237635,
title = {In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation},
author = {Gerbig, Yvonne B. and Michaels, C. A. and Bradby, Jodie E. and Haberl, Bianca and Cook, Robert F.},
abstractNote = {Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. Furthermore, the obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.},
doi = {10.1103/PhysRevB.92.214110},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 21,
volume = 92,
place = {United States},
year = {2015},
month = {12}
}
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