skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation

Abstract

Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. Furthermore, the obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.

Authors:
 [1];  [2];  [3];  [4];  [2]
  1. National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States); Univ. of Maryland, College Park, MD (United States)
  2. National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States)
  3. Australian National Univ., Canberra (Australia)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1237635
Alternate Identifier(s):
OSTI ID: 1234065
Grant/Contract Number:  
AC05-00OR22725; 7620
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 92; Journal Issue: 21; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gerbig, Yvonne B., Michaels, C. A., Bradby, Jodie E., Haberl, Bianca, and Cook, Robert F. In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation. United States: N. p., 2015. Web. https://doi.org/10.1103/PhysRevB.92.214110.
Gerbig, Yvonne B., Michaels, C. A., Bradby, Jodie E., Haberl, Bianca, & Cook, Robert F. In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation. United States. https://doi.org/10.1103/PhysRevB.92.214110
Gerbig, Yvonne B., Michaels, C. A., Bradby, Jodie E., Haberl, Bianca, and Cook, Robert F. Thu . "In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation". United States. https://doi.org/10.1103/PhysRevB.92.214110. https://www.osti.gov/servlets/purl/1237635.
@article{osti_1237635,
title = {In situ spectroscopic study of the plastic deformation of amorphous silicon under nonhydrostatic conditions induced by indentation},
author = {Gerbig, Yvonne B. and Michaels, C. A. and Bradby, Jodie E. and Haberl, Bianca and Cook, Robert F.},
abstractNote = {Indentation-induced plastic deformation of amorphous silicon (a-Si) thin films was studied by in situ Raman imaging of the deformed contact region of an indented sample, employing a Raman spectroscopy-enhanced instrumented indentation technique (IIT). The occurrence and evolving spatial distribution of changes in the a-Si structure caused by processes, such as polyamorphization and crystallization, induced by indentation loading were observed. Furthermore, the obtained experimental results are linked with previously published work on the plastic deformation of a-Si under hydrostatic compression and shear deformation to establish a model for the deformation behavior of a-Si under indentation loading.},
doi = {10.1103/PhysRevB.92.214110},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 21,
volume = 92,
place = {United States},
year = {2015},
month = {12}
}

Journal Article:

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Liquidlike atomic environments act as plasticity carriers in amorphous silicon
journal, December 2005


Amorphous silicon under mechanical shear deformations: Shear velocity and temperature effects
journal, April 2011


Role of local order in the small-scale plasticity of model amorphous materials
journal, December 2010


Structural information from the Raman spectrum of amorphous silicon
journal, July 1985


Thermal Expansion and Grüneisen Parameters of Amorphous Silicon: A Realistic Model Calculation
journal, September 1997


Phonons and phonon localization in a Si : Computational approaches and results for continuous-random-network-derived structures
journal, August 1998


Local vibrational densities of states in glasses: Numerical study of a model of amorphous silicon
journal, July 1994

  • Ishibashi, Kiyoshi; Tsumuraya, Kazuo; Nakata, Shinji
  • The Journal of Chemical Physics, Vol. 101, Issue 2
  • DOI: 10.1063/1.467764

Raman scattering in hydrogenated amorphous silicon under high pressure
journal, April 1982


Atomistic simulations of structural relaxation processes in amorphous silicon
journal, January 2002

  • Ishimaru, Manabu
  • Journal of Applied Physics, Vol. 91, Issue 2
  • DOI: 10.1063/1.1425437

Glassy Quasithermal Distribution of Local Geometries and Defects in Quenched Amorphous Silicon
journal, August 1988


Variable structural order in amorphous silicon
journal, September 1982


Medium-range structure of amorphous silicon studied by the Voronoi—Delaunay method
journal, August 1996


Dynamics of tetrahedral networks: Amorphous Si and Ge
journal, November 1988


Model investigation of the Raman spectra of amorphous silicon
journal, February 1997


Dynamical models of hydrogenated amorphous silicon
journal, April 1991


Structural order on different length scales in amorphous silicon investigated by Raman spectroscopy
journal, March 2010

  • Muthmann, S.; Köhler, F.; Carius, R.
  • physica status solidi (a), Vol. 207, Issue 3
  • DOI: 10.1002/pssa.200982749

Tetrahedrally Coordinated Random-Network Structure
journal, July 1973


Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scattering
journal, July 1984

  • Tsu, R.; Hernandez, J. G.; Pollak, F. H.
  • Journal of Non-Crystalline Solids, Vol. 66, Issue 1-2, p. 109-114
  • DOI: 10.1016/0022-3093(84)90307-7

Order parameters in a-Si systems
journal, April 1983


Raman spectra and structure of amorphous Si
journal, March 2001


Structural and vibrational properties of a realistic model of amorphous silicon
journal, February 1987


Depth-dependent disordering in a -Si produced by self-ion-implantation
journal, December 1994


Dependence of the vibrational spectra of amorphous silicon on the defect concentration and ring distribution
journal, November 1999


Pressure-induced semiconductor-metal transitions in amorphous Si and Ge
journal, March 1974


High-pressure x-ray scattering and computer simulation studies of density-induced polyamorphism in silicon
journal, June 2007


A density-driven phase transition between semiconducting and metallic polyamorphs of silicon
journal, August 2005

  • McMillan, Paul F.; Wilson, Mark; Daisenberger, Dominik
  • Nature Materials, Vol. 4, Issue 9
  • DOI: 10.1038/nmat1458

Pressure induced crystallization in amorphous silicon
journal, June 2011

  • Pandey, K. K.; Garg, Nandini; Shanavas, K. V.
  • Journal of Applied Physics, Vol. 109, Issue 11
  • DOI: 10.1063/1.3592963

Pressure-induced phase transition of crystalline and amorphous silicon and germanium at low temperatures
journal, January 1996


New insight into pressure-induced phase transitions of amorphous silicon: the role of impurities
journal, May 2013

  • Haberl, Bianca; Guthrie, Malcolm; Sprouster, David J.
  • Journal of Applied Crystallography, Vol. 46, Issue 3
  • DOI: 10.1107/S0021889813010509

Deviatoric stress: a nuisance or a gold mine?
journal, June 2006


Hydrostatic limits of 11 pressure transmitting media
journal, March 2009

  • Klotz, S.; Chervin, J-C.; Munsch, P.
  • Journal of Physics D: Applied Physics, Vol. 42, Issue 7, Article No. 075413
  • DOI: 10.1088/0022-3727/42/7/075413

Autocatalytic avalanches of unit inelastic shearing events are the mechanism of plastic deformation in amorphous silicon
journal, December 2005


Atomistic simulations of elastic and plastic properties in amorphous silicon
journal, June 2009


Crystallization of amorphous silicon induced by mechanical shear deformations
journal, July 2011


Atomistic simulation and analysis of plasticity in amorphous silicon§
journal, September 2006


Computer simulations of crystallization kinetics in amorphous silicon under pressure
journal, March 2012

  • Shanavas, K. V.; Pandey, K. K.; Garg, Nandini
  • Journal of Applied Physics, Vol. 111, Issue 6
  • DOI: 10.1063/1.3694735

Ab initio simulation of first-order amorphous-to-amorphous phase transition of silicon
journal, June 2001


Ab initio simulation of pressure-induced low-energy excitations in amorphous silicon
journal, October 2002


Phase transformations induced by spherical indentation in ion-implanted amorphous silicon
journal, July 2006

  • Haberl, B.; Bradby, J. E.; Ruffell, S.
  • Journal of Applied Physics, Vol. 100, Issue 1
  • DOI: 10.1063/1.2210767

Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon
journal, December 2009

  • Ruffell, S.; Vedi, J.; Bradby, J. E.
  • Journal of Applied Physics, Vol. 106, Issue 12
  • DOI: 10.1063/1.3267853

Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon
journal, April 2009

  • Ruffell, S.; Vedi, J.; Bradby, J. E.
  • Journal of Applied Physics, Vol. 105, Issue 8
  • DOI: 10.1063/1.3097752

Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon
journal, March 2013

  • Bayu Aji, Leonardus B.; Ruffell, S.; Haberl, B.
  • Journal of Materials Research, Vol. 28, Issue 8
  • DOI: 10.1557/jmr.2013.32

Amorphization and Conductivity of Silicon and Germanium Induced by Indentation
journal, May 1988


Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon
journal, September 2007

  • Ruffell, S.; Bradby, J. E.; Williams, J. S.
  • Journal of Applied Physics, Vol. 102, Issue 6
  • DOI: 10.1063/1.2781394

Raman microscopy investigations of structural phase transformations in crystalline and amorphous silicon due to indentation with a Vickers diamond at room temperature and at 77 K
journal, May 2003

  • Khayyat, Maha M.; Banini, Godsway K.; Hasko, David G.
  • Journal of Physics D: Applied Physics, Vol. 36, Issue 11
  • DOI: 10.1088/0022-3727/36/11/310

Simulations of indentation-induced phase transformations in crystalline and amorphous silicon
journal, July 2008


Indentation device for in situ Raman spectroscopic and optical studies
journal, December 2012

  • Gerbig, Y. B.; Michaels, C. A.; Forster, A. M.
  • Review of Scientific Instruments, Vol. 83, Issue 12
  • DOI: 10.1063/1.4769995

In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films
journal, November 2014

  • Gerbig, Yvonne B.; Michaels, Chris A.; Cook, Robert F.
  • Journal of Materials Research, Vol. 30, Issue 3
  • DOI: 10.1557/jmr.2014.316

Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing
journal, November 2011

  • Haberl, B.; Bogle, S. N.; Li, T.
  • Journal of Applied Physics, Vol. 110, Issue 9
  • DOI: 10.1063/1.3658628

On the nanostructure of pure amorphous silicon
journal, July 1995

  • Williamson, D. L.; Roorda, S.; Chicoine, M.
  • Applied Physics Letters, Vol. 67, Issue 2
  • DOI: 10.1063/1.114675

Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon
journal, January 2008

  • Roura, P.; Farjas, J.; Roca i. Cabarrocas, P.
  • Journal of Applied Physics, Vol. 104, Issue 7
  • DOI: 10.1063/1.2990767

Low‐temperature modifications in the defect structure of amorphous silicon probed by in situ Raman spectroscopy
journal, October 1993

  • Battaglia, A.; Coffa, S.; Priolo, F.
  • Applied Physics Letters, Vol. 63, Issue 16
  • DOI: 10.1063/1.110553

Polyamorphic Amorphous Silicon at High Pressure: Raman and Spatially Resolved X-ray Scattering and Molecular Dynamics Studies
journal, December 2011

  • Daisenberger, Dominik; Deschamps, Thierry; Champagnon, Bernard
  • The Journal of Physical Chemistry B, Vol. 115, Issue 48
  • DOI: 10.1021/jp205090s

Raman spectra of synthetic sapphire
journal, December 2001


Separating the effects of hydrogen and bond-angle variation on the amorphous-silicon band gap
journal, November 1993


High Density Amorphous Form and Polyamorphic Transformations of Silicon
journal, July 2004


Raman scattering in metallic Si and Ge up to 50 GPa
journal, April 1992


Ab initio study of the high-pressure phase transition from the cubic-diamond to the β-tin structure of Si
journal, November 2001


Increasing medium-range order in amorphous silicon with low-energy ion bombardment
journal, May 2003

  • Gerbi, J. E.; Voyles, P. M.; Treacy, M. M. J.
  • Applied Physics Letters, Vol. 82, Issue 21
  • DOI: 10.1063/1.1578164

Pressure-induced amorphization and an amorphous–amorphous transition in densified porous silicon
journal, November 2001

  • Deb, Sudip K.; Wilding, Martin; Somayazulu, Maddury
  • Nature, Vol. 414, Issue 6863
  • DOI: 10.1038/35107036

    Works referencing / citing this record:

    A Review on Micro- and Nanoscratching/Tribology at High Temperatures: Instrumentation and Experimentation
    journal, July 2018

    • Chavoshi, Saeed Zare; Xu, Shuozhi
    • Journal of Materials Engineering and Performance, Vol. 27, Issue 8
    • DOI: 10.1007/s11665-018-3493-5

    In-situ high temperature micro-Raman investigation of annealing behavior of high-pressure phases of Si
    journal, June 2019

    • Mannepalli, Sowjanya; Mangalampalli, Kiran S. R. N.
    • Journal of Applied Physics, Vol. 125, Issue 22
    • DOI: 10.1063/1.5099325