The influence of hold time on the onset of plastic deformation in silicon
Abstract
Here, the formation of silicon (Si) in its -Sn form is known to be nucleation limited, with an undetermined period of time between when critical pressure for the trans- formation is reached and when the transformation actually occurs. In this letter, we use nanoindentation to apply critical pressure to diamond cubic Si and hold the sample under pressure to promote deformation via phase transformation and crystalline defects. We report that the number of indents in which phase transformation is observed increases with increasing hold time. Interestingly, the number of indents in which crystalline defects are observed also increase with increasing hold time, suggesting crystalline defects are also nucleation limited. Raman spectroscopy and cross-sectional transmission electron microscopy is used to show that these two deformation mechanisms are mutually exclusive under the indentation conditions used within this letter.
- Authors:
-
- Australian National Univ., Canberra (Australia)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Australian National Univ. Canberra (Australia)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1237634
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 24; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; hydrostatics; nucleation; dislocations; Raman spectra; nanotechnology
Citation Formats
Wong, Sherman, Haberl, Bianca, Bradby, Jodie E., and Williams, James S. The influence of hold time on the onset of plastic deformation in silicon. United States: N. p., 2015.
Web. doi:10.1063/1.4938480.
Wong, Sherman, Haberl, Bianca, Bradby, Jodie E., & Williams, James S. The influence of hold time on the onset of plastic deformation in silicon. United States. https://doi.org/10.1063/1.4938480
Wong, Sherman, Haberl, Bianca, Bradby, Jodie E., and Williams, James S. Thu .
"The influence of hold time on the onset of plastic deformation in silicon". United States. https://doi.org/10.1063/1.4938480. https://www.osti.gov/servlets/purl/1237634.
@article{osti_1237634,
title = {The influence of hold time on the onset of plastic deformation in silicon},
author = {Wong, Sherman and Haberl, Bianca and Bradby, Jodie E. and Williams, James S.},
abstractNote = {Here, the formation of silicon (Si) in its -Sn form is known to be nucleation limited, with an undetermined period of time between when critical pressure for the trans- formation is reached and when the transformation actually occurs. In this letter, we use nanoindentation to apply critical pressure to diamond cubic Si and hold the sample under pressure to promote deformation via phase transformation and crystalline defects. We report that the number of indents in which phase transformation is observed increases with increasing hold time. Interestingly, the number of indents in which crystalline defects are observed also increase with increasing hold time, suggesting crystalline defects are also nucleation limited. Raman spectroscopy and cross-sectional transmission electron microscopy is used to show that these two deformation mechanisms are mutually exclusive under the indentation conditions used within this letter.},
doi = {10.1063/1.4938480},
journal = {Journal of Applied Physics},
number = 24,
volume = 118,
place = {United States},
year = {Thu Dec 24 00:00:00 EST 2015},
month = {Thu Dec 24 00:00:00 EST 2015}
}
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Works referencing / citing this record:
Origin of a Nanoindentation Pop-in Event in Silicon Crystal
journal, March 2017
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Reveal the Deformation Mechanism of (110) Silicon from Cryogenic Temperature to Elevated Temperature by Molecular Dynamics Simulation
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Nanoindentation Induced Deformation and Pop-in Events in a Silicon Crystal: Molecular Dynamics Simulation and Experiment
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Reveal the Deformation Mechanism of (110) Silicon from Cryogenic Temperature to Elevated Temperature by Molecular Dynamics Simulation
journal, November 2019
- Han, Jing; Song, Yuanming; Tang, Wei
- Nanomaterials, Vol. 9, Issue 11