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Title: On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of E a = 21.6 kJ/mol and A o = 2.3 × 10 -17 m 2/s for Au-1 vol. % ZnO and E a =12.7 kJ/mol and A o = 3.1 × 10 -18 m 2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivitymore » throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.« less
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2015-1707J
Journal ID: ISSN 0021-8979; JAPIAU; 579736
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electrical resistivity; metallic thin films; gold; zinc oxide films; hardness; thermal stability; nanocomposites; Au; ZnO; e-beam; grain size; Hall-Petch; electron scattering; Mayadas-Shatzkes; ODS; SEM; EBSD; TKD; TEM
OSTI Identifier:
1237469
Alternate Identifier(s):
OSTI ID: 1228212

Argibay, Nicolas, Mogonye, J. E., Michael, Joseph R., Goeke, Ronald S., Kotula, Paul G., Scharf, T. W., Dugger, Michael Thomas, and Prasad, Somuri V.. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films. United States: N. p., Web. doi:10.1063/1.4915922.
Argibay, Nicolas, Mogonye, J. E., Michael, Joseph R., Goeke, Ronald S., Kotula, Paul G., Scharf, T. W., Dugger, Michael Thomas, & Prasad, Somuri V.. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films. United States. doi:10.1063/1.4915922.
Argibay, Nicolas, Mogonye, J. E., Michael, Joseph R., Goeke, Ronald S., Kotula, Paul G., Scharf, T. W., Dugger, Michael Thomas, and Prasad, Somuri V.. 2015. "On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films". United States. doi:10.1063/1.4915922. https://www.osti.gov/servlets/purl/1237469.
@article{osti_1237469,
title = {On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films},
author = {Argibay, Nicolas and Mogonye, J. E. and Michael, Joseph R. and Goeke, Ronald S. and Kotula, Paul G. and Scharf, T. W. and Dugger, Michael Thomas and Prasad, Somuri V.},
abstractNote = {We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.},
doi = {10.1063/1.4915922},
journal = {Journal of Applied Physics},
number = 14,
volume = 117,
place = {United States},
year = {2015},
month = {4}
}