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Title: The origins of near band-edge transitions in hexagonal boron nitride epilayers

Authors:
 [1] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1]
  1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
Publication Date:
Grant/Contract Number:
FG02-09ER46552
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1236902

Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X.. The origins of near band-edge transitions in hexagonal boron nitride epilayers. United States: N. p., Web. doi:10.1063/1.4941540.
Du, X. Z., Li, J., Lin, J. Y., & Jiang, H. X.. The origins of near band-edge transitions in hexagonal boron nitride epilayers. United States. doi:10.1063/1.4941540.
Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X.. 2016. "The origins of near band-edge transitions in hexagonal boron nitride epilayers". United States. doi:10.1063/1.4941540.
@article{osti_1236902,
title = {The origins of near band-edge transitions in hexagonal boron nitride epilayers},
author = {Du, X. Z. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {},
doi = {10.1063/1.4941540},
journal = {Applied Physics Letters},
number = 5,
volume = 108,
place = {United States},
year = {2016},
month = {2}
}

Works referenced in this record:

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
journal, May 2005
  • Nam, K. B.; Nakarmi, M. L.; Lin, J. Y.
  • Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108
  • DOI: 10.1063/1.1943489