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Title: Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm -3 carrier density, and ~0.1 cm 2 V -1 s -1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.
Authors:
;  [1] ;  [1] ;  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
BNL-111764-2016-JA
Journal ID: ISSN 0003-6951; R&D Project: 16065/16074; KC0403020
Grant/Contract Number:
SC00112704; SC0012704
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY
OSTI Identifier:
1236555
Alternate Identifier(s):
OSTI ID: 1226190

Chang-Yong Nam, Stein, Aaron, Kisslinger, Kim, and Black, Charles T. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates. United States: N. p., Web. doi:10.1063/1.4935793.
Chang-Yong Nam, Stein, Aaron, Kisslinger, Kim, & Black, Charles T. Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates. United States. doi:10.1063/1.4935793.
Chang-Yong Nam, Stein, Aaron, Kisslinger, Kim, and Black, Charles T. 2015. "Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates". United States. doi:10.1063/1.4935793. https://www.osti.gov/servlets/purl/1236555.
@article{osti_1236555,
title = {Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates},
author = {Chang-Yong Nam and Stein, Aaron and Kisslinger, Kim and Black, Charles T.},
abstractNote = {We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019 cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.},
doi = {10.1063/1.4935793},
journal = {Applied Physics Letters},
number = 20,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}