Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Shojaei, B.; O'Malley, P. J. J.; Shabani, J.; Roushan, P.; Schultz, B. D.; Lutchyn, R. M.; Nayak, C.; Martinis, J. M.; Palmstrøm, C. J.

doi:10.1103/PhysRevB.93.075302

Title: Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Authors:: Shojaei, B.; O'Malley, P. J. J.; Shabani, J.; Roushan, P.; Schultz, B. D.; Lutchyn, R. M.; Nayak, C.; Martinis, J. M.; Palmstrøm, C. J.

Publication Date:: Mon Feb 01 00:00:00 EST 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1236541

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 7; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Shojaei, B., O'Malley, P. J. J., Shabani, J., Roushan, P., Schultz, B. D., Lutchyn, R. M., Nayak, C., Martinis, J. M., and Palmstrøm, C. J. Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas.  United States: N. p., 2016. 
Web.  doi:10.1103/PhysRevB.93.075302.

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                    Shojaei, B., O'Malley, P. J. J., Shabani, J., Roushan, P., Schultz, B. D., Lutchyn, R. M., Nayak, C., Martinis, J. M., & Palmstrøm, C. J. Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas.  United States.  https://doi.org/10.1103/PhysRevB.93.075302

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                    Shojaei, B., O'Malley, P. J. J., Shabani, J., Roushan, P., Schultz, B. D., Lutchyn, R. M., Nayak, C., Martinis, J. M., and Palmstrøm, C. J. Mon .  
"Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas".  United States.  https://doi.org/10.1103/PhysRevB.93.075302.

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@article{osti_1236541,

  title        = {Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas},

  author       = {Shojaei, B. and O'Malley, P. J. J. and Shabani, J. and Roushan, P. and Schultz, B. D. and Lutchyn, R. M. and Nayak, C. and Martinis, J. M. and Palmstrøm, C. J.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.93.075302},

  journal      = {Physical Review B},

  number       = 7,

  volume       = 93,

  place        = {United States},

  year         = {Mon Feb 01 00:00:00 EST 2016},

  month        = {Mon Feb 01 00:00:00 EST 2016}

}

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Works referenced in this record:

Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases
journal, June 2015

Shojaei, B.; McFadden, A.; Shabani, J.
Applied Physics Letters, Vol. 106, Issue 22
DOI: 10.1063/1.4921970

Spintronics: Fundamentals and applications
journal, April 2004

Žutić, Igor; Fabian, Jaroslav; Das Sarma, S.
Reviews of Modern Physics, Vol. 76, Issue 2
DOI: 10.1103/RevModPhys.76.323

Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density
journal, May 1998

Heida, J. P.; van Wees, B. J.; Kuipers, J. J.
Physical Review B, Vol. 57, Issue 19
DOI: 10.1103/PhysRevB.57.11911

Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in $InAlAs / InGaAs / InAlAs$ Quantum Wells as a Function of Quantum Well Asymmetry
journal, July 2002

Koga, Takaaki; Nitta, Junsaku; Akazaki, Tatsushi
Physical Review Letters, Vol. 89, Issue 4
DOI: 10.1103/PhysRevLett.89.046801

Magnetointersubband oscillations of conductivity in a two-dimensional electronic system
journal, February 1994

Raikh, M. E.; Shahbazyan, T. V.
Physical Review B, Vol. 49, Issue 8
DOI: 10.1103/PhysRevB.49.5531

Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
journal, August 2010

Lutchyn, Roman M.; Sau, Jay D.; Das Sarma, S.
Physical Review Letters, Vol. 105, Issue 7
DOI: 10.1103/PhysRevLett.105.077001

Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructure
journal, July 2006

Huang, M. L.; Chang, Y. C.; Chang, C. H.
Applied Physics Letters, Vol. 89, Issue 1
DOI: 10.1063/1.2218826

All-electric quantum point contact spin-polarizer
journal, September 2009

Debray, P.; Rahman, S. M. S.; Wan, J.
Nature Nanotechnology, Vol. 4, Issue 11
DOI: 10.1038/nnano.2009.240

Large Rashba Splitting in InAs Quantum Wells due to Electron Wave Function Penetration into the Barrier Layers
journal, June 2000

Grundler, Dirk
Physical Review Letters, Vol. 84, Issue 26
DOI: 10.1103/PhysRevLett.84.6074

Helical Liquids and Majorana Bound States in Quantum Wires
journal, October 2010

Oreg, Yuval; Refael, Gil; von Oppen, Felix
Physical Review Letters, Vol. 105, Issue 17
DOI: 10.1103/PhysRevLett.105.177002

A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh
journal, October 1990

Tan, I‐H.; Snider, G. L.; Chang, L. D.
Journal of Applied Physics, Vol. 68, Issue 8
DOI: 10.1063/1.346245

Electronic analog of the electro‐optic modulator
journal, February 1990

Datta, Supriyo; Das, Biswajit
Applied Physics Letters, Vol. 56, Issue 7
DOI: 10.1063/1.102730

Spin-split subbands and magneto-oscillations in III-V asymmetric heterostructures
journal, September 1994

de Andrada e. Silva, E. A.; La Rocca, G. C.; Bassani, F.
Physical Review B, Vol. 50, Issue 12
DOI: 10.1103/PhysRevB.50.8523

Spin–orbit induced electronic spin separation in semiconductor nanostructures
journal, January 2012

Kohda, Makoto; Nakamura, Shuji; Nishihara, Yoshitaka
Nature Communications, Vol. 3, Issue 1
DOI: 10.1038/ncomms2080

Circuit quantum electrodynamics with a spin qubit
journal, October 2012

Petersson, K. D.; McFaul, L. W.; Schroer, M. D.
Nature, Vol. 490, Issue 7420
DOI: 10.1038/nature11559

Experimental and materials considerations for the topological superconducting state in electron- and hole-doped semiconductors: Searching for non-Abelian Majorana modes in 1D nanowires and 2D heterostructures
journal, February 2012

Sau, Jay D.; Tewari, Sumanta; Das Sarma, S.
Physical Review B, Vol. 85, Issue 6
DOI: 10.1103/PhysRevB.85.064512

Experimental and theoretical approach to spin splitting in modulation-doped ${In}_{x}$ ${Ga}_{1 - x}$ As/InP quantum wells for B→0
journal, January 1997

Engels, G.; Lange, J.; Schäpers, Th.
Physical Review B, Vol. 55, Issue 4
DOI: 10.1103/PhysRevB.55.R1958

Spin--Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
book, January 2003

Winkler, Roland; Höhler, Gerhard; Kühn, Johann H.
Springer Tracts in Modern Physics, Vol. 191
DOI: 10.1007/b13586

Generic New Platform for Topological Quantum Computation Using Semiconductor Heterostructures
journal, January 2010

Sau, Jay D.; Lutchyn, Roman M.; Tewari, Sumanta
Physical Review Letters, Vol. 104, Issue 4
DOI: 10.1103/PhysRevLett.104.040502

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
DOI: 10.1063/1.1368156

Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
journal, November 1984

Bychkov, Yu A.; Rashba, E. I.
Journal of Physics C: Solid State Physics, Vol. 17, Issue 33
DOI: 10.1088/0022-3719/17/33/015

Challenges for semiconductor spintronics
journal, March 2007

Awschalom, David D.; Flatté, Michael E.
Nature Physics, Vol. 3, Issue 3
DOI: 10.1038/nphys551

Gwyddion: an open-source software for SPM data analysis
journal, January 2012

Nečas, David; Klapetek, Petr
Open Physics, Vol. 10, Issue 1
DOI: 10.2478/s11534-011-0096-2

Majorana fermions in a tunable semiconductor device
journal, March 2010

Alicea, Jason
Physical Review B, Vol. 81, Issue 12
DOI: 10.1103/PhysRevB.81.125318

Small-angle scattering in two-dimensional electron gases
journal, August 1991

Coleridge, P. T.
Physical Review B, Vol. 44, Issue 8
DOI: 10.1103/PhysRevB.44.3793

Gate-Controlled Spin-Orbit Quantum Interference Effects in Lateral Transport
journal, February 2003

Miller, J. B.; Zumbühl, D. M.; Marcus, C. M.
Physical Review Letters, Vol. 90, Issue 7
DOI: 10.1103/PhysRevLett.90.076807

Spin–orbit qubit in a semiconductor nanowire
journal, December 2010

Nadj-Perge, S.; Frolov, S. M.; Bakkers, E. P. A. M.
Nature, Vol. 468, Issue 7327
DOI: 10.1038/nature09682

Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
journal, March 1990

Tuttle, Gary; Kroemer, Herbert; English, John H.
Journal of Applied Physics, Vol. 67, Issue 6
DOI: 10.1063/1.345426

Spin-Orbit Coupling Effects in Zinc Blende Structures
journal, October 1955

Dresselhaus, G.
Physical Review, Vol. 100, Issue 2
DOI: 10.1103/PhysRev.100.580

Gate Control of Spin-Orbit Interaction in an Inverted I $n_{0.53}$ G $a_{0.47}$ As/I $n_{0.52}$ A $l_{0.48}$ As Heterostructure
journal, February 1997

Nitta, Junsaku; Akazaki, Tatsushi; Takayanagi, Hideaki
Physical Review Letters, Vol. 78, Issue 7
DOI: 10.1103/PhysRevLett.78.1335

Band structure of indium antimonide
journal, January 1957

Kane, Evan O.
Journal of Physics and Chemistry of Solids, Vol. 1, Issue 4
DOI: 10.1016/0022-3697(57)90013-6

Spin Hall Effect Transistor
journal, December 2010

Wunderlich, J.; Park, B. -G.; Irvine, A. C.
Science, Vol. 330, Issue 6012
DOI: 10.1126/science.1195816

All-electric all-semiconductor spin field-effect transistors
journal, December 2014

Chuang, Pojen; Ho, Sheng-Chin; Smith, L. W.
Nature Nanotechnology, Vol. 10, Issue 1
DOI: 10.1038/nnano.2014.296

New perspectives for Rashba spin–orbit coupling
journal, August 2015

Manchon, A.; Koo, H. C.; Nitta, J.
Nature Materials, Vol. 14, Issue 9
DOI: 10.1038/nmat4360

New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons
journal, April 2001

Zudov, M. A.; Ponomarev, I. V.; Efros, A. L.
Physical Review Letters, Vol. 86, Issue 16
DOI: 10.1103/PhysRevLett.86.3614

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Title: Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Citation Formats

Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases journal, June 2015

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Spin-split subbands and magneto-oscillations in III-V asymmetric heterostructures journal, September 1994

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Majorana fermions in a tunable semiconductor device journal, March 2010

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Spin–orbit qubit in a semiconductor nanowire journal, December 2010

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Spintronics: Fundamentals and applications
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Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density
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