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Title: Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

Abstract

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Authors:
 [1];  [2];  [2];  [2];  [2];  [1]
+ Show Author Affiliations
  1. New Mexico State Univ., Las Cruces, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1236484
Report Number(s):
SAND-2015-9606J
Journal ID: ISSN 0957-4484; 607600
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 27; Journal Issue: 1; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; GaN; AlGaN; Seebeck coefficient; electron gas; hole gas

Citation Formats

Song, Erdong, Li, Qiming, Swartzentruber, Brian, Pan, Wei, Wang, George T., and Martinez, Julio A. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires. United States: N. p., 2015. Web. doi:10.1088/0957-4484/27/1/015204.
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Song, Erdong, Li, Qiming, Swartzentruber, Brian, Pan, Wei, Wang, George T., & Martinez, Julio A. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires. United States. https://doi.org/10.1088/0957-4484/27/1/015204
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Song, Erdong, Li, Qiming, Swartzentruber, Brian, Pan, Wei, Wang, George T., and Martinez, Julio A. Wed . "Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires". United States. https://doi.org/10.1088/0957-4484/27/1/015204. https://www.osti.gov/servlets/purl/1236484.
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@article{osti_1236484,
title = {Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires},
author = {Song, Erdong and Li, Qiming and Swartzentruber, Brian and Pan, Wei and Wang, George T. and Martinez, Julio A.},
abstractNote = {The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.},
doi = {10.1088/0957-4484/27/1/015204},
journal = {Nanotechnology},
number = 1,
volume = 27,
place = {United States},
year = {Wed Nov 25 00:00:00 EST 2015},
month = {Wed Nov 25 00:00:00 EST 2015}
}
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https://doi.org/10.1088/0957-4484/27/1/015204
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Works referenced in this record:

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
journal, July 2006

  • Li, Yat; Xiang, Jie; Qian, Fang
  • Nano Letters, Vol. 6, Issue 7
  • DOI: 10.1021/nl060849z

Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires
journal, August 2011

  • Wong, Bryan M.; Léonard, François; Li, Qiming
  • Nano Letters, Vol. 11, Issue 8
  • DOI: 10.1021/nl200981x

Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires
journal, February 2013

  • Moon, Jaeyun; Kim, Ji-Hun; Chen, Zack C. Y.
  • Nano Letters, Vol. 13, Issue 3, p. 1196-1202
  • DOI: 10.1021/nl304619u

Kondo effect in a single-electron transistor
journal, January 1998

  • Goldhaber-Gordon, D.; Shtrikman, Hadas; Mahalu, D.
  • Nature, Vol. 391, Issue 6663, p. 156-159
  • DOI: 10.1038/34373

High electron mobility transistor based on a GaN‐AlxGa 1−xN heterojunction
journal, August 1993

  • Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.
  • Applied Physics Letters, Vol. 63, Issue 9, p. 1214-1215
  • DOI: 10.1063/1.109775

Metal cluster enhanced organic solar cells
journal, February 2000

  • Westphalen, M.; Kreibig, U.; Rostalski, J.
  • Solar Energy Materials and Solar Cells, Vol. 61, Issue 1, p. 97-105
  • DOI: 10.1016/S0927-0248(99)00100-2

Thermoelectric Phenomena, Materials, and Applications
journal, August 2011

Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
journal, September 1997

  • Dziuba, Z.; Antoszewski, J.; Dell, J. M.
  • Journal of Applied Physics, Vol. 82, Issue 6
  • DOI: 10.1063/1.366137

Radial modulation doping in core–shell nanowires
journal, January 2014

  • Dillen, David C.; Kim, Kyounghwan; Liu, En-Shao
  • Nature Nanotechnology, Vol. 9, Issue 2
  • DOI: 10.1038/nnano.2013.301

Contribution of radial dopant concentration to the thermoelectric properties of core-shell nanowires
journal, March 2013

  • Martinez, Julio A.; Cho, Jeong-Hyun; Liu, Xiaohua
  • Applied Physics Letters, Vol. 102, Issue 10
  • DOI: 10.1063/1.4794821

Thermoelectric properties of InxGa1−xN alloys
journal, January 2008

  • Pantha, B. N.; Dahal, R.; Li, J.
  • Applied Physics Letters, Vol. 92, Issue 4
  • DOI: 10.1063/1.2839309

One-Dimensional Quantum Confinement Effect Modulated Thermoelectric Properties in InAs Nanowires
journal, February 2012

  • Tian, Yuan; Sakr, Mohammed R.; Kinder, Jesse M.
  • Nano Letters, Vol. 12, Issue 12
  • DOI: 10.1021/nl304194c

Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
journal, November 2006

Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films
journal, July 2008

  • Li, Qiming; Wang, George T.
  • Applied Physics Letters, Vol. 93, Issue 4
  • DOI: 10.1063/1.2965798

Deep level optical spectroscopy of GaN nanorods
journal, September 2009

  • Armstrong, A.; Li, Q.; Bogart, K. H. A.
  • Journal of Applied Physics, Vol. 106, Issue 5
  • DOI: 10.1063/1.3211317

GaN nanowire surface state observed using deep level optical spectroscopy
journal, April 2010

  • Armstrong, A.; Li, Q.; Lin, Y.
  • Applied Physics Letters, Vol. 96, Issue 16
  • DOI: 10.1063/1.3404182

Enhanced thermoelectric figure of merit in SiGe alloy nanowires by boundary and hole-phonon scattering
journal, October 2011

  • Martinez, Julio A.; Provencio, Paula P.; Picraux, S. T.
  • Journal of Applied Physics, Vol. 110, Issue 7
  • DOI: 10.1063/1.3647575

Thermoelectric power measurements of wide band gap semiconducting nanowires
journal, January 2009

  • Lee, Chul-Ho; Yi, Gyu-Chul; Zuev, Yuri M.
  • Applied Physics Letters, Vol. 94, Issue 2
  • DOI: 10.1063/1.3067868

The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN
journal, August 2005

  • Van Daele, B.; Van Tendeloo, G.; Ruythooren, W.
  • Applied Physics Letters, Vol. 87, Issue 6
  • DOI: 10.1063/1.2008361

Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n -GaN
journal, June 2002

  • Lu, Changzhi; Chen, Hongnai; Lv, Xiaoliang
  • Journal of Applied Physics, Vol. 91, Issue 11
  • DOI: 10.1063/1.1471390

Activation energies of Si donors in GaN
journal, May 1996

  • Götz, W.; Johnson, N. M.; Chen, C.
  • Applied Physics Letters, Vol. 68, Issue 22
  • DOI: 10.1063/1.115805

A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films
journal, August 2000

  • Meister, D.; Böhm, M.; Topf, M.
  • Journal of Applied Physics, Vol. 88, Issue 4
  • DOI: 10.1063/1.1305549

Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition
journal, May 2002

  • Kim, Jae-Ryoung; So, Hye Mi; Park, Jong Wan
  • Applied Physics Letters, Vol. 80, Issue 19
  • DOI: 10.1063/1.1478158

Size-dependent impurity activation energy in GaN nanowires
journal, April 2009

  • Yoon, J.; Girgis, A. M.; Shalish, I.
  • Applied Physics Letters, Vol. 94, Issue 14
  • DOI: 10.1063/1.3115769

Experimental investigation of electron transport properties of gallium nitride nanowires
journal, July 2008

  • Motayed, Abhishek; Davydov, Albert V.; Mohammad, S. N.
  • Journal of Applied Physics, Vol. 104, Issue 2
  • DOI: 10.1063/1.2952035

Electrical characterization of single GaN nanowires
journal, October 2005

Mechanism of two-dimensional electron gas formation in AlxGa1−xN/GaN heterostructures
journal, August 2002

  • Jang, Ho Won; Jeon, Chang Min; Kim, Ki Hong
  • Applied Physics Letters, Vol. 81, Issue 7
  • DOI: 10.1063/1.1501162

Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors
journal, October 2001

  • Chu, R. M.; Zhou, Y. G.; Zheng, Y. D.
  • Applied Physics Letters, Vol. 79, Issue 14
  • DOI: 10.1063/1.1406978

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure
journal, August 2010

  • Zhang, L.; Ding, K.; Yan, J. C.
  • Applied Physics Letters, Vol. 97, Issue 6
  • DOI: 10.1063/1.3478556

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
journal, December 2009

Determination of Transport Properties in Chromium Disilicide Nanowires via Combined Thermoelectric and Structural Characterizations
journal, June 2007

  • Zhou, Feng; Szczech, Jeannine; Pettes, Michael T.
  • Nano Letters, Vol. 7, Issue 6
  • DOI: 10.1021/nl0706143

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
journal, March 1999

  • Ambacher, O.; Smart, J.; Shealy, J. R.
  • Journal of Applied Physics, Vol. 85, Issue 6
  • DOI: 10.1063/1.369664

Giant Thermovoltage in Single InAs Nanowire Field-Effect Transistors
journal, July 2013

  • Roddaro, Stefano; Ercolani, Daniele; Safeen, Mian Akif
  • Nano Letters, Vol. 13, Issue 8
  • DOI: 10.1021/nl401482p

Unusually Large Enhancement of Thermopower in an Electric Field Induced Two-Dimensional Electron Gas
journal, January 2012

  • Ohta, Hiromichi; Mizuno, Taku; Zheng, Shijian
  • Advanced Materials, Vol. 24, Issue 6
  • DOI: 10.1002/adma.201103809

Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3
journal, January 2007

  • Ohta, Hiromichi; Kim, SungWng; Mune, Yoriko
  • Nature Materials, Vol. 6, Issue 2
  • DOI: 10.1038/nmat1821

High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface
journal, December 2010

  • Nakajima, Akira; Sumida, Yasunobu; Dhyani, Mahesh H.
  • Applied Physics Express, Vol. 3, Issue 12
  • DOI: 10.1143/APEX.3.121004

The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
journal, February 2012

  • Al Mustafa, N.; Granzner, R.; Polyakov, V. M.
  • Journal of Applied Physics, Vol. 111, Issue 4
  • DOI: 10.1063/1.3688219

Temperature-Independent Two-Dimensional Hole Gas Confined at GaN/AlGaN Heterointerface
journal, September 2013

  • Nakajima, Akira; Liu, Pucheng; Ogura, Masahiko
  • Applied Physics Express, Vol. 6, Issue 9
  • DOI: 10.7567/APEX.6.091002

Observation of Anderson Localization in an Electron Gas
journal, May 1969

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    journal, February 2019

    • Liu, Naiming; Peters, Jonathan; Ramu, Ashok
    • APL Materials, Vol. 7, Issue 2
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    Eco-friendly high-performance silicide thermoelectric materials
    journal, February 2017

    • Liu, Wei; Yin, Kang; Zhang, Qingjie
    • National Science Review, Vol. 4, Issue 4
    • DOI: 10.1093/nsr/nwx011

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    journal, May 2019

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