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Title: High-mobility BaSnO3 grown by oxide molecular beam epitaxy

High-mobility perovskite BaSnO3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V-1 s-1 in films grown on PrScO3. Lastly, the results open up a wide range of opportunities for future electronic devices.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Grant/Contract Number:
FG02-02ER45994; DEFG02-02ER45994
Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; molecular beam epitaxy; dielectric oxides; reflection high energy electron diffraction; carrier mobility; epitaxy
OSTI Identifier:
1236408
Alternate Identifier(s):
OSTI ID: 1242969