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Title: High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

Abstract

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grown on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1236408
Alternate Identifier(s):
OSTI ID: 1242969; OSTI ID: 1420607
Grant/Contract Number:  
FG02-02ER45994; DEFG02-02ER45994
Resource Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; molecular beam epitaxy; dielectric oxides; reflection high energy electron diffraction; carrier mobility; epitaxy

Citation Formats

Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. High-mobility BaSnO3 grown by oxide molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4939657.
Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., & Stemmer, Susanne. High-mobility BaSnO3 grown by oxide molecular beam epitaxy. United States. doi:10.1063/1.4939657.
Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. Thu . "High-mobility BaSnO3 grown by oxide molecular beam epitaxy". United States. doi:10.1063/1.4939657.
@article{osti_1236408,
title = {High-mobility BaSnO3 grown by oxide molecular beam epitaxy},
author = {Raghavan, Santosh and Schumann, Timo and Kim, Honggyu and Zhang, Jack Y. and Cain, Tyler A. and Stemmer, Susanne},
abstractNote = {High-mobility perovskite BaSnO3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V-1 s-1 in films grown on PrScO3. Lastly, the results open up a wide range of opportunities for future electronic devices.},
doi = {10.1063/1.4939657},
journal = {APL Materials},
number = 1,
volume = 4,
place = {United States},
year = {2016},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4939657

Citation Metrics:
Cited by: 33 works
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    Works referencing / citing this record:

    Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3
    journal, July 2019


    Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy
    journal, July 2018


    Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
    journal, June 2019


    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019