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Title: High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

Abstract

High-mobility perovskite BaSnO3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V-1 s-1 in films grown on PrScO3. Lastly, the results open up a wide range of opportunities for future electronic devices.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1236408
Alternate Identifier(s):
OSTI ID: 1242969; OSTI ID: 1420607
Grant/Contract Number:  
DEFG02-02ER45994; FG02-02ER45994
Resource Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 4 Journal Issue: 1; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; molecular beam epitaxy; dielectric oxides; reflection high energy electron diffraction; carrier mobility; epitaxy

Citation Formats

Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. High-mobility BaSnO 3 grown by oxide molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4939657.
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Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., & Stemmer, Susanne. High-mobility BaSnO 3 grown by oxide molecular beam epitaxy. United States. https://doi.org/10.1063/1.4939657
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Raghavan, Santosh, Schumann, Timo, Kim, Honggyu, Zhang, Jack Y., Cain, Tyler A., and Stemmer, Susanne. Fri . "High-mobility BaSnO 3 grown by oxide molecular beam epitaxy". United States. https://doi.org/10.1063/1.4939657.
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@article{osti_1236408,
title = {High-mobility BaSnO 3 grown by oxide molecular beam epitaxy},
author = {Raghavan, Santosh and Schumann, Timo and Kim, Honggyu and Zhang, Jack Y. and Cain, Tyler A. and Stemmer, Susanne},
abstractNote = {High-mobility perovskite BaSnO3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V-1 s-1 in films grown on PrScO3. Lastly, the results open up a wide range of opportunities for future electronic devices.},
doi = {10.1063/1.4939657},
journal = {APL Materials},
number = 1,
volume = 4,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2016},
month = {Fri Jan 01 00:00:00 EST 2016}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.4939657
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