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Title: Enhanced conversion efficiency in wide-bandgap GaNP solar cells

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. Univ. of California, San Diego, La Jolla, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2015-6907J
Journal ID: ISSN 0003-6951; APPLAB; 599097
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; III-V semiconductors; band gap; interface structure; diffusion; antireflective coatings
OSTI Identifier:
1236231
Alternate Identifier(s):
OSTI ID: 1420525

Sukrittanon, Supanee, Liu, Ren, Ro, Yun Goo, Pan, Janet L., Jungjohann, Katherine Leigh, Tu, Charles W., and Dayeh, Shadi A.. Enhanced conversion efficiency in wide-bandgap GaNP solar cells. United States: N. p., Web. doi:10.1063/1.4933317.
Sukrittanon, Supanee, Liu, Ren, Ro, Yun Goo, Pan, Janet L., Jungjohann, Katherine Leigh, Tu, Charles W., & Dayeh, Shadi A.. Enhanced conversion efficiency in wide-bandgap GaNP solar cells. United States. doi:10.1063/1.4933317.
Sukrittanon, Supanee, Liu, Ren, Ro, Yun Goo, Pan, Janet L., Jungjohann, Katherine Leigh, Tu, Charles W., and Dayeh, Shadi A.. 2015. "Enhanced conversion efficiency in wide-bandgap GaNP solar cells". United States. doi:10.1063/1.4933317. https://www.osti.gov/servlets/purl/1236231.
@article{osti_1236231,
title = {Enhanced conversion efficiency in wide-bandgap GaNP solar cells},
author = {Sukrittanon, Supanee and Liu, Ren and Ro, Yun Goo and Pan, Janet L. and Jungjohann, Katherine Leigh and Tu, Charles W. and Dayeh, Shadi A.},
abstractNote = {In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, Eg –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.},
doi = {10.1063/1.4933317},
journal = {Applied Physics Letters},
number = 15,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}