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Title: Enhanced conversion efficiency in wide-bandgap GaNP solar cells

In this study, we demonstrate –2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap GaP, GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] –1.8%, E g –2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3× higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated.
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. Univ. of California, San Diego, La Jolla, CA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0003-6951; APPLAB; 599097
Grant/Contract Number:
AC04-94AL85000; AC52-06NA25396
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 15; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
14 SOLAR ENERGY; III-V semiconductors; band gap; interface structure; diffusion; antireflective coatings
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1420525