The impact of Cu on recombination in high voltage CdTe solar cells
Abstract
Using photoluminescence spectroscopy, we construct a recombination model for state-of-the-art CdTe solar cells doped with Cu. Here, we observe that Cu on Cd sites form a dominant acceptor state about 150 meV from the valence band. Although it is intuitive that this state can increase hole density, we also find that this relatively shallow dopant can also limit lifetime. Consequently, CdTe solar cells doped with Cu could have a lifetime limitation inversely proportional to the hole concentration.
- Authors:
-
[1];
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- First Solar Inc., Perrysburg, OH (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); NREL-First Solar Cooperative Research and Development Agreement (CRADA)
- OSTI Identifier:
- 1236151
- Alternate Identifier(s):
- OSTI ID: 1234057
- Report Number(s):
- NREL/JA-5900-65705
Journal ID: ISSN 0003-6951; APPLAB
- Grant/Contract Number:
- AC36-08GO28308; AC36-08-GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 24; Related Information: Applied Physics Letters; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; III-VI semiconductors; photoluminescence; doping; electron densities of states; solar cells; emission spectroscopy; semiconductors; electronic transport; electronic bandstructure; polycrystalline material; excitons; time-resolved photoluminescence; phonons; photoluminescence spectroscopy
Citation Formats
Kuciauskas, Darius, Dippo, Pat, Kanevce, Ana, Zhao, Zhibo, Cheng, Long, Los, Andrei, Gloeckler, Markus, and Metzger, Wyatt K. The impact of Cu on recombination in high voltage CdTe solar cells. United States: N. p., 2015.
Web. doi:10.1063/1.4938127.
Kuciauskas, Darius, Dippo, Pat, Kanevce, Ana, Zhao, Zhibo, Cheng, Long, Los, Andrei, Gloeckler, Markus, & Metzger, Wyatt K. The impact of Cu on recombination in high voltage CdTe solar cells. United States. https://doi.org/10.1063/1.4938127
Kuciauskas, Darius, Dippo, Pat, Kanevce, Ana, Zhao, Zhibo, Cheng, Long, Los, Andrei, Gloeckler, Markus, and Metzger, Wyatt K. Mon .
"The impact of Cu on recombination in high voltage CdTe solar cells". United States. https://doi.org/10.1063/1.4938127. https://www.osti.gov/servlets/purl/1236151.
@article{osti_1236151,
title = {The impact of Cu on recombination in high voltage CdTe solar cells},
author = {Kuciauskas, Darius and Dippo, Pat and Kanevce, Ana and Zhao, Zhibo and Cheng, Long and Los, Andrei and Gloeckler, Markus and Metzger, Wyatt K.},
abstractNote = {Using photoluminescence spectroscopy, we construct a recombination model for state-of-the-art CdTe solar cells doped with Cu. Here, we observe that Cu on Cd sites form a dominant acceptor state about 150 meV from the valence band. Although it is intuitive that this state can increase hole density, we also find that this relatively shallow dopant can also limit lifetime. Consequently, CdTe solar cells doped with Cu could have a lifetime limitation inversely proportional to the hole concentration.},
doi = {10.1063/1.4938127},
journal = {Applied Physics Letters},
number = 24,
volume = 107,
place = {United States},
year = {Mon Dec 14 00:00:00 EST 2015},
month = {Mon Dec 14 00:00:00 EST 2015}
}
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Works referencing / citing this record:
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