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Title: Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, USA
Publication Date:
Grant/Contract Number:
12-3834
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1235974

Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., and Chandrashekhar, M. V. S.. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection. United States: N. p., Web. doi:10.1063/1.4940385.
Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., & Chandrashekhar, M. V. S.. Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection. United States. doi:10.1063/1.4940385.
Chava, Venkata S. N., Omar, Sabih U., Brown, Gabriel, Shetu, Shamaita S., Andrews, J., Sudarshan, T. S., and Chandrashekhar, M. V. S.. 2016. "Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection". United States. doi:10.1063/1.4940385.
@article{osti_1235974,
title = {Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection},
author = {Chava, Venkata S. N. and Omar, Sabih U. and Brown, Gabriel and Shetu, Shamaita S. and Andrews, J. and Sudarshan, T. S. and Chandrashekhar, M. V. S.},
abstractNote = {},
doi = {10.1063/1.4940385},
journal = {Applied Physics Letters},
number = 4,
volume = 108,
place = {United States},
year = {2016},
month = {1}
}