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Title: Biased doped silicene as a way to tune electronic conduction

Authors:
;
Publication Date:
Grant/Contract Number:
PTDC/FIS/120055/2010
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Nuclear Energy (NE), Fuel Cycle Technologies (NE-5)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1235629

Pogorelov, Y. G., and Loktev, V. M.. Biased doped silicene as a way to tune electronic conduction. United States: N. p., Web. doi:10.1103/PhysRevB.93.045117.
Pogorelov, Y. G., & Loktev, V. M.. Biased doped silicene as a way to tune electronic conduction. United States. doi:10.1103/PhysRevB.93.045117.
Pogorelov, Y. G., and Loktev, V. M.. 2016. "Biased doped silicene as a way to tune electronic conduction". United States. doi:10.1103/PhysRevB.93.045117.
@article{osti_1235629,
title = {Biased doped silicene as a way to tune electronic conduction},
author = {Pogorelov, Y. G. and Loktev, V. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.045117},
journal = {Physical Review B},
number = 4,
volume = 93,
place = {United States},
year = {2016},
month = {1}
}