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Title: Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

Abstract

We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. Thus we then extract the nonradiative recombination current associated with the quantum-dot active region from a comparison of measured and calculated gain versus current relations.

Authors:
 [1];  [2];  [2];  [2]
+ Show Author Affiliations
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1235538
Report Number(s):
SAND-2016-0273J
Journal ID: ISSN 0003-6951; APPLAB; 618406
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 17; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; quantum dots; quantum wells; emission spectra; spontaneous emission; carrier density

Citation Formats

Chow, Weng W., Liu, Alan Y., Gossard, Arthur C., and Bowers, John E. Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers. United States: N. p., 2015. Web. doi:10.1063/1.4934838.
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Chow, Weng W., Liu, Alan Y., Gossard, Arthur C., & Bowers, John E. Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers. United States. https://doi.org/10.1063/1.4934838
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Chow, Weng W., Liu, Alan Y., Gossard, Arthur C., and Bowers, John E. Wed . "Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers". United States. https://doi.org/10.1063/1.4934838. https://www.osti.gov/servlets/purl/1235538.
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@article{osti_1235538,
title = {Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers},
author = {Chow, Weng W. and Liu, Alan Y. and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. Thus we then extract the nonradiative recombination current associated with the quantum-dot active region from a comparison of measured and calculated gain versus current relations.},
doi = {10.1063/1.4934838},
journal = {Applied Physics Letters},
number = 17,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}
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https://doi.org/10.1063/1.4934838
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Works referenced in this record:

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    Works referencing / citing this record:

    Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates
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    • Wan, Yating; Li, Qiang; Liu, Alan Y.
    • Applied Physics Letters, Vol. 108, Issue 22
    • DOI: 10.1063/1.4952600

    Effects of modulation p doping in InAs quantum dot lasers on silicon
    journal, August 2018

    • Zhang, Zeyu; Jung, Daehwan; Norman, Justin C.
    • Applied Physics Letters, Vol. 113, Issue 6
    • DOI: 10.1063/1.5040792

    Quantum-optical influences in optoelectronics—An introduction
    journal, December 2018

    • Chow, Weng W.; Reitzenstein, Stephan
    • Applied Physics Reviews, Vol. 5, Issue 4
    • DOI: 10.1063/1.5045580

    On quantum-dot lasing at gain peak with linewidth enhancement factor α H = 0
    journal, February 2020

    • Chow, Weng W.; Zhang, Zeyu; Norman, Justin C.
    • APL Photonics, Vol. 5, Issue 2
    • DOI: 10.1063/1.5133075

    Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width
    journal, January 2019

    • Auth, Dominik; Liu, Songtao; Norman, Justin
    • Optics Express, Vol. 27, Issue 19
    • DOI: 10.1364/oe.27.027256

    Optically pumped 13  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon
    journal, January 2016

    Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width
    text, January 2019

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