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Title: Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material

Authors:
 [1] ;  [2] ; ORCiD logo [1] ;  [1] ;  [3] ;  [1] ;  [1] ;  [4] ;  [3] ;  [1]
  1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  3. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA
  4. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA, PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Publication Date:
Grant/Contract Number:
EE0005329; FG02-00ER15087
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 3; Related Information: CHORUS Timestamp: 2018-03-29 14:53:52; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1235491