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Title: Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material

Authors:
 [1] ;  [2] ; ORCiD logo [1] ;  [1] ;  [3] ;  [1] ;  [1] ;  [4] ;  [3] ;  [1]
  1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
  3. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA
  4. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA, PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
Publication Date:
Grant/Contract Number:
EE0005329; FG02-00ER15087
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1235491

Jaramillo, R., Sher, Meng-Ju, Ofori-Okai, Benjamin K., Steinmann, V., Yang, Chuanxi, Hartman, Katy, Nelson, Keith A., Lindenberg, Aaron M., Gordon, Roy G., and Buonassisi, T.. Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material. United States: N. p., Web. doi:10.1063/1.4940157.
Jaramillo, R., Sher, Meng-Ju, Ofori-Okai, Benjamin K., Steinmann, V., Yang, Chuanxi, Hartman, Katy, Nelson, Keith A., Lindenberg, Aaron M., Gordon, Roy G., & Buonassisi, T.. Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material. United States. doi:10.1063/1.4940157.
Jaramillo, R., Sher, Meng-Ju, Ofori-Okai, Benjamin K., Steinmann, V., Yang, Chuanxi, Hartman, Katy, Nelson, Keith A., Lindenberg, Aaron M., Gordon, Roy G., and Buonassisi, T.. 2016. "Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material". United States. doi:10.1063/1.4940157.
@article{osti_1235491,
title = {Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material},
author = {Jaramillo, R. and Sher, Meng-Ju and Ofori-Okai, Benjamin K. and Steinmann, V. and Yang, Chuanxi and Hartman, Katy and Nelson, Keith A. and Lindenberg, Aaron M. and Gordon, Roy G. and Buonassisi, T.},
abstractNote = {},
doi = {10.1063/1.4940157},
journal = {Journal of Applied Physics},
number = 3,
volume = 119,
place = {United States},
year = {2016},
month = {1}
}

Works referenced in this record:

Characterization of vacuum-evaporated tin sulfide film for solar cell materials
journal, September 1994
  • Noguchi, Hidenori; Setiyadi, Agus; Tanamura, Hiromasa
  • Solar Energy Materials and Solar Cells, Vol. 35, p. 325-331
  • DOI: 10.1016/0927-0248(94)90158-9

Atomic Layer Deposition of Tin Monosulfide Thin Films
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  • Sinsermsuksakul, Prasert; Heo, Jaeyeong; Noh, Wontae
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High-efficiency solution-processed perovskite solar cells with millimeter-scale grains
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Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber
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