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Title: Compact modeling of total ionizing dose and aging effects in MOS technologies

Abstract

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

Authors:
 [1];  [2];  [3]
  1. Univ. of Southern California, Marina del Rey, CA (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1235324
Report Number(s):
SAND-2015-0868J
Journal ID: ISSN 0018-9499; 565596
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 4; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; compact modeling; ionizing radiation; aging effects; MOSFET; SOI; semiconductor devices

Citation Formats

Esqueda, Ivan S., Barnaby, Hugh J., and King, Michael Patrick. Compact modeling of total ionizing dose and aging effects in MOS technologies. United States: N. p., 2015. Web. doi:10.1109/TNS.2015.2414426.
Esqueda, Ivan S., Barnaby, Hugh J., & King, Michael Patrick. Compact modeling of total ionizing dose and aging effects in MOS technologies. United States. https://doi.org/10.1109/TNS.2015.2414426
Esqueda, Ivan S., Barnaby, Hugh J., and King, Michael Patrick. Thu . "Compact modeling of total ionizing dose and aging effects in MOS technologies". United States. https://doi.org/10.1109/TNS.2015.2414426. https://www.osti.gov/servlets/purl/1235324.
@article{osti_1235324,
title = {Compact modeling of total ionizing dose and aging effects in MOS technologies},
author = {Esqueda, Ivan S. and Barnaby, Hugh J. and King, Michael Patrick},
abstractNote = {This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.},
doi = {10.1109/TNS.2015.2414426},
journal = {IEEE Transactions on Nuclear Science},
number = 4,
volume = 62,
place = {United States},
year = {Thu Jun 18 00:00:00 EDT 2015},
month = {Thu Jun 18 00:00:00 EDT 2015}
}

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Works referencing / citing this record:

Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI’s Using Universal Rad-SPICE MOSFET Model
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