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Title: Compact modeling of total ionizing dose and aging effects in MOS technologies

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.
 [1] ;  [2] ;  [3]
  1. Univ. of Southern California, Marina del Rey, CA (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0018-9499; 565596
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 4; Journal ID: ISSN 0018-9499
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
compact modeling; ionizing radiation; aging effects; MOSFET; SOI; semiconductor devices
OSTI Identifier: