Mechanical flip-chip for ultra-high electron mobility devices

Journal Article · 21 September 2015 · Scientific Reports

DOI: https://doi.org/10.1038/srep13494 · OSTI ID:1235312

Bennaceur, Keyan ^[1]; Schmidt, Benjamin A. ^[1]; Gaucher, Samuel ^[1]; Laroche, Dominique ^[2]; Lilly, Michael P. ^[3]; Reno, John L. ^[3]; West, Ken W. ^[4]; Pfeiffer, Loren N. ^[4]; Gervais, Guillaume ^[1]

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1. McGill Univ., Montreal, QC (Canada)
2. McGill Univ., Montreal, QC (Canada); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
4. Princeton Univ., Princeton, NJ (United States)

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1235312
• Report Number(s): SAND-2015-1552J; 567371
• Journal Information: Scientific Reports, Journal Name: Scientific Reports Journal Issue: C Vol. 5; ISSN 2045-2322
• Publisher: Nature Publishing GroupCopyright Statement
• Country of Publication: United States
• Language: English