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Title: Thermal transport in tantalum oxide films for memristive applications

The thermal conductivity of amorphous TaO x memristive films having variable oxygen content is measured using time domain thermoreflectance. Furthermore, the thermal transport is described by a two-partmodel where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. Additionally, the vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaO x switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Report Number(s):
SAND-2015-1010J
Journal ID: ISSN 0003-6951; 566977; TRN: US1600384
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 02; Related Information: See also the erratum at http://dx.doi.org/10.1063/1.4928532; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS
OSTI Identifier:
1235298
Alternate Identifier(s):
OSTI ID: 1226772

Landon, Colin Donald, Wilke, Rudeger H. T., Brumbach, Michael T., Brennecka, Geoffrey L., Blea-Kirby, Mia Angelica, Ihlefeld, Jon, Marinella, Matthew, and Thomas Edwin Beechem. Thermal transport in tantalum oxide films for memristive applications. United States: N. p., Web. doi:10.1063/1.4926921.
Landon, Colin Donald, Wilke, Rudeger H. T., Brumbach, Michael T., Brennecka, Geoffrey L., Blea-Kirby, Mia Angelica, Ihlefeld, Jon, Marinella, Matthew, & Thomas Edwin Beechem. Thermal transport in tantalum oxide films for memristive applications. United States. doi:10.1063/1.4926921.
Landon, Colin Donald, Wilke, Rudeger H. T., Brumbach, Michael T., Brennecka, Geoffrey L., Blea-Kirby, Mia Angelica, Ihlefeld, Jon, Marinella, Matthew, and Thomas Edwin Beechem. 2015. "Thermal transport in tantalum oxide films for memristive applications". United States. doi:10.1063/1.4926921. https://www.osti.gov/servlets/purl/1235298.
@article{osti_1235298,
title = {Thermal transport in tantalum oxide films for memristive applications},
author = {Landon, Colin Donald and Wilke, Rudeger H. T. and Brumbach, Michael T. and Brennecka, Geoffrey L. and Blea-Kirby, Mia Angelica and Ihlefeld, Jon and Marinella, Matthew and Thomas Edwin Beechem},
abstractNote = {The thermal conductivity of amorphous TaOx memristive films having variable oxygen content is measured using time domain thermoreflectance. Furthermore, the thermal transport is described by a two-partmodel where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. Additionally, the vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaOx switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.},
doi = {10.1063/1.4926921},
journal = {Applied Physics Letters},
number = 02,
volume = 107,
place = {United States},
year = {2015},
month = {7}
}