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Title: Thermal transport in tantalum oxide films for memristive applications

The thermal conductivity of amorphous TaO x memristive films having variable oxygen content is measured using time domain thermoreflectance. Furthermore, the thermal transport is described by a two-partmodel where the electrical contribution is quantified via the Wiedemann-Franz relation and the vibrational contribution by the minimum thermal conductivity limit for amorphous solids. Additionally, the vibrational contribution remains constant near 0.9 W/mK regardless of oxygen concentration, while the electrical contribution varies from 0 to 3.3 W/mK. Thus, the dominant thermal carrier in TaO x switches between vibrations and charge carriers and is controllable either by oxygen content during deposition, or dynamically by field-induced charge state migration.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Report Number(s):
SAND-2015-1010J
Journal ID: ISSN 0003-6951; 566977; TRN: US1600384
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 02; Related Information: See also the erratum at http://dx.doi.org/10.1063/1.4928532; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS
OSTI Identifier:
1235298
Alternate Identifier(s):
OSTI ID: 1226772