Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure
Abstract
We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 1010 cm-2 to 2.7 × 1011 cm-2 were achieved, yielding a maximal combined Hall mobility (μHall ) of 7.7 × 105 cm2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3 × 1010 cm-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Hsinchu (Taiwan)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1235261
- Alternate Identifier(s):
- OSTI ID: 1420457
- Report Number(s):
- SAND-2015-2479J
Journal ID: ISSN 0003-6951; 579779
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 14; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, and Lu, Tzu -Ming. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure. United States: N. p., 2015.
Web. doi:10.1063/1.4917296.
Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, & Lu, Tzu -Ming. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure. United States. https://doi.org/10.1063/1.4917296
Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, and Lu, Tzu -Ming. Wed .
"Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure". United States. https://doi.org/10.1063/1.4917296. https://www.osti.gov/servlets/purl/1235261.
@article{osti_1235261,
title = {Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure},
author = {Laroche, Dominique and Huang, ShiHsien and Nielsen, Erik and Liu, Chee Wee and Li, Jiun -Yun and Lu, Tzu -Ming},
abstractNote = {We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 1010 cm-2 to 2.7 × 1011 cm-2 were achieved, yielding a maximal combined Hall mobility (μHall ) of 7.7 × 105 cm2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3 × 1010 cm-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.},
doi = {10.1063/1.4917296},
journal = {Applied Physics Letters},
number = 14,
volume = 106,
place = {United States},
year = {Wed Apr 08 00:00:00 EDT 2015},
month = {Wed Apr 08 00:00:00 EDT 2015}
}
Web of Science
Works referenced in this record:
Pseudospin Quantum Computation in Semiconductor Nanostructures
journal, October 2003
- Scarola, V. W.; Park, K.; Sarma, S. Das
- Physical Review Letters, Vol. 91, Issue 16
Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells
journal, September 2004
- Malissa, H.; Jantsch, W.; Mühlberger, M.
- Applied Physics Letters, Vol. 85, Issue 10
Integer quantum Hall states in coupled double electron gas systems at mismatched carrier densities
journal, May 1996
- Millard, I. S.; Patel, N. K.; Simmons, M. Y.
- Journal of Physics: Condensed Matter, Vol. 8, Issue 22
New fractional quantum Hall state in double-layer two-dimensional electron systems
journal, March 1992
- Eisenstein, J. P.; Boebinger, G. S.; Pfeiffer, L. N.
- Physical Review Letters, Vol. 68, Issue 9
Exciton condensation and perfect Coulomb drag
journal, August 2012
- Nandi, D.; Finck, A. D. K.; Eisenstein, J. P.
- Nature, Vol. 488, Issue 7412
Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
journal, March 2012
- Lu, T. M.; Pan, W.; Tsui, D. C.
- Physical Review B, Vol. 85, Issue 12
High-performance strained Si/SiGe pMOS devices with multiple quantum wells
journal, December 2002
- Collaert, N.; Verheyen, P.; De Meyer, K.
- IEEE Transactions on Nanotechnology, Vol. 1, Issue 4
Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
journal, May 2006
- Lin, Yu Min; Wu, San Lein; Chang, Shoou Jinn
- Japanese Journal of Applied Physics, Vol. 45, Issue 5A
A one-dimensional SiGe superlattice grown by UHV epitaxy
journal, November 1975
- Kasper, E.; Herzog, H. J.; Kibbel, H.
- Applied Physics, Vol. 8, Issue 3
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
journal, October 2011
- Lu, T. M.; Lee, C. -H.; Huang, S. -H.
- Applied Physics Letters, Vol. 99, Issue 15
High-mobility Si and Ge structures
journal, December 1997
- Schäffler, Friedrich
- Semiconductor Science and Technology, Vol. 12, Issue 12
Analysis of retrograded double quantum well p-type MOSFET
journal, September 1998
- Chretien, O.; Yousif, M. Y. A.; Nur, O.
- Semiconductor Science and Technology, Vol. 13, Issue 9
Quantum-Hall quantum bits
journal, October 2002
- Yang, S. -R. Eric; Schliemann, John; MacDonald, A. H.
- Physical Review B, Vol. 66, Issue 15
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
journal, July 2012
- Huang, S. -H.; Lu, T. -M.; Lu, S. -C.
- Applied Physics Letters, Vol. 101, Issue 4
Design and fabrication of a SiGe double quantum well structure for g-factor tuning
journal, May 2006
- Malissa, H.; Gruber, D.; Pachinger, D.
- Superlattices and Microstructures, Vol. 39, Issue 5
Evidence for a Finite-Temperature Phase Transition in a Bilayer Quantum Hall System
journal, March 2008
- Champagne, A. R.; Eisenstein, J. P.; Pfeiffer, L. N.
- Physical Review Letters, Vol. 100, Issue 9
Evolution of the bilayer quantum Hall state under charge imbalance
journal, February 2005
- Clarke, W. R.; Micolich, A. P.; Hamilton, A. R.
- Physical Review B, Vol. 71, Issue 8
Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems
journal, August 1996
- Hamilton, A. R.; Simmons, M. Y.; Bolton, F. M.
- Physical Review B, Vol. 54, Issue 8
Vanishing Hall Resistance at High Magnetic Field in a Double-Layer Two-Dimensional Electron System
journal, July 2004
- Kellogg, M.; Eisenstein, J. P.; Pfeiffer, L. N.
- Physical Review Letters, Vol. 93, Issue 3
Valley splitting of heterostructures in tilted magnetic fields
journal, April 2006
- Lai, K.; Lu, T. M.; Pan, W.
- Physical Review B, Vol. 73, Issue 16
Observation of intersubband scattering in a 2-dimensional electron system
journal, March 1982
- Störmer, H. L.; Gossard, A. C.; Wiegmann, W.
- Solid State Communications, Vol. 41, Issue 10
Role of Density Imbalance in an Interacting Bilayer Hole System
journal, August 2003
- Tutuc, E.; Melinte, S.; De Poortere, E. P.
- Physical Review Letters, Vol. 91, Issue 7
Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs
journal, May 2009
- Lu, T. M.; Tsui, D. C.; Lee, C. -H.
- Applied Physics Letters, Vol. 94, Issue 18
Magnetic-field-driven destruction of quantum Hall states in a double quantum well
journal, April 1990
- Boebinger, G. S.; Jiang, H. W.; Pfeiffer, L. N.
- Physical Review Letters, Vol. 64, Issue 15
Photoluminescence and magnetotransport of 2-D hole gases in Si/SiGe/Si heterostructures
journal, April 1994
- Apetz, R.; Loo, R.; Vescan, L.
- Solid-State Electronics, Vol. 37, Issue 4-6