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Title: Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 10 10 cm -2 to 2.7 × 10 11 cm -2 were achieved, yielding a maximal combined Hall mobility (μ Hall ) of 7.7 × 10 5 cm 2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to n Hall > 3.3 × 10 10 cm -2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Hsinchu (Taiwan)
Publication Date:
Report Number(s):
SAND-2015-2479J
Journal ID: ISSN 0003-6951; 579779
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1235261
Alternate Identifier(s):
OSTI ID: 1420457

Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, and Lu, Tzu -Ming. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure. United States: N. p., Web. doi:10.1063/1.4917296.
Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, & Lu, Tzu -Ming. Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure. United States. doi:10.1063/1.4917296.
Laroche, Dominique, Huang, ShiHsien, Nielsen, Erik, Liu, Chee Wee, Li, Jiun -Yun, and Lu, Tzu -Ming. 2015. "Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure". United States. doi:10.1063/1.4917296. https://www.osti.gov/servlets/purl/1235261.
@article{osti_1235261,
title = {Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure},
author = {Laroche, Dominique and Huang, ShiHsien and Nielsen, Erik and Liu, Chee Wee and Li, Jiun -Yun and Lu, Tzu -Ming},
abstractNote = {We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Additionally, the combined Hall densities (n Hall ) ranging from 2.6 × 1010 cm-2 to 2.7 × 1011 cm-2 were achieved, yielding a maximal combined Hall mobility (μHall ) of 7.7 × 105 cm2/(V • s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3 × 1010 cm-2, consistent with Schrödinger-Poisson simulations. Furthermore, the integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.},
doi = {10.1063/1.4917296},
journal = {Applied Physics Letters},
number = 14,
volume = 106,
place = {United States},
year = {2015},
month = {4}
}