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Title: Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.
Authors:
 [1] ; ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [5] ;  [5] ;  [5] ;  [5] ;  [5] ;  [6] ;  [6] ;  [6] more »;  [6] ;  [6] « less
  1. Purdue Univ., West Lafayette, IN (United States)
  2. State Univ. of New York at Buffalo (SUNY), Buffalo, NY (United States)
  3. INFN Milano-Bicocca, Milano (Italy)
  4. Univ. and INFN Milano-Bicocca, Milano (Italy)
  5. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
  6. Univ. di Genova, Genova (Italy)
Publication Date:
Report Number(s):
FERMILAB-PUB-15-567-CD
Journal ID: ISSN 1748-0221
Grant/Contract Number:
AC02-07CH11359
Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 10; Journal Issue: 08; Conference: 7th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Niagara Falls, ON (Canada); Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Research Org:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CMS; pixel; Phase 2 upgrade; HL-LHC; thin, planar sensors; silicon
OSTI Identifier:
1235041

Bubna, M., G. Bolla, Bortoletto, D., Shipsey, I., Manfra, M., Khan, K., Arndt, K., Hinton, N., Godshalk, A., Kumar, A., Menasce, D., Moroni, L., Chramowicz, J., Lei, C. M., Prosser, A., Rivera, R., Uplegger, L., Vetere, Maurizio Lo, Robutti, Enrico, Ferro, Fabrizio, Ravera, Fabio, and Costa, Marco. Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC. United States: N. p., Web. doi:10.1088/1748-0221/10/08/C08002.
Bubna, M., G. Bolla, Bortoletto, D., Shipsey, I., Manfra, M., Khan, K., Arndt, K., Hinton, N., Godshalk, A., Kumar, A., Menasce, D., Moroni, L., Chramowicz, J., Lei, C. M., Prosser, A., Rivera, R., Uplegger, L., Vetere, Maurizio Lo, Robutti, Enrico, Ferro, Fabrizio, Ravera, Fabio, & Costa, Marco. Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC. United States. doi:10.1088/1748-0221/10/08/C08002.
Bubna, M., G. Bolla, Bortoletto, D., Shipsey, I., Manfra, M., Khan, K., Arndt, K., Hinton, N., Godshalk, A., Kumar, A., Menasce, D., Moroni, L., Chramowicz, J., Lei, C. M., Prosser, A., Rivera, R., Uplegger, L., Vetere, Maurizio Lo, Robutti, Enrico, Ferro, Fabrizio, Ravera, Fabio, and Costa, Marco. 2015. "Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC". United States. doi:10.1088/1748-0221/10/08/C08002. https://www.osti.gov/servlets/purl/1235041.
@article{osti_1235041,
title = {Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC},
author = {Bubna, M. and G. Bolla and Bortoletto, D. and Shipsey, I. and Manfra, M. and Khan, K. and Arndt, K. and Hinton, N. and Godshalk, A. and Kumar, A. and Menasce, D. and Moroni, L. and Chramowicz, J. and Lei, C. M. and Prosser, A. and Rivera, R. and Uplegger, L. and Vetere, Maurizio Lo and Robutti, Enrico and Ferro, Fabrizio and Ravera, Fabio and Costa, Marco},
abstractNote = {The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.},
doi = {10.1088/1748-0221/10/08/C08002},
journal = {Journal of Instrumentation},
number = 08,
volume = 10,
place = {United States},
year = {2015},
month = {8}
}