Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS 2

Jariwala, Deep; Howell, Sarah L.; Chen, Kan-Sheng; Kang, Junmo; Sangwan, Vinod K.; Filippone, Stephen A.; Turrisi, Riccardo; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

doi:10.1021/acs.nanolett.5b04141

Title: Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS ₂

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Abstract

Here, the recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of “all 2D” van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS₂. The resulting p–n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS₂ heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS₂ can function as an acceptor in hybrid solar cells.

Authors:

Jariwala, Deep ^[1]; Howell, Sarah L. ^[1]; Chen, Kan-Sheng ^[1]; Kang, Junmo ^[1]; Sangwan, Vinod K. ^[1]; Filippone, Stephen A. ^[1]; Turrisi, Riccardo ^[1]; Marks, Tobin J. ^[1]; Lauhon, Lincoln J. ^[1]; Hersam, Mark C. ^[1]

Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

Publication Date:: Fri Dec 18 00:00:00 EST 2015

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). Argonne-Northwestern Solar Energy Research Center (ANSER)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1233972

Alternate Identifier(s):: OSTI ID: 1387512

Grant/Contract Number:: SC0001059

Resource Type:: Published Article

Journal Name:: Nano Letters

Additional Journal Information:: Journal Name: Nano Letters Journal Volume: 16 Journal Issue: 1; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; catalysis (homogeneous); catalysis (heterogeneous); solar (photovoltaic); solar (fuels); photosynthesis (natural and artificial); bio-inspired; hydrogen and fuel cells; electrodes - solar; defects; charge transport; spin dynamics; membrane; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly)

Citation Formats


                    Jariwala, Deep, Howell, Sarah L., Chen, Kan-Sheng, Kang, Junmo, Sangwan, Vinod K., Filippone, Stephen A., Turrisi, Riccardo, Marks, Tobin J., Lauhon, Lincoln J., and Hersam, Mark C. Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS 2.  United States: N. p., 2015. 
Web.  doi:10.1021/acs.nanolett.5b04141.

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                    Jariwala, Deep, Howell, Sarah L., Chen, Kan-Sheng, Kang, Junmo, Sangwan, Vinod K., Filippone, Stephen A., Turrisi, Riccardo, Marks, Tobin J., Lauhon, Lincoln J., & Hersam, Mark C. Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS 2.  United States.  https://doi.org/10.1021/acs.nanolett.5b04141

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                    Jariwala, Deep, Howell, Sarah L., Chen, Kan-Sheng, Kang, Junmo, Sangwan, Vinod K., Filippone, Stephen A., Turrisi, Riccardo, Marks, Tobin J., Lauhon, Lincoln J., and Hersam, Mark C. Fri .  
"Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS 2".  United States.  https://doi.org/10.1021/acs.nanolett.5b04141.

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@article{osti_1233972,

  title        = {Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS 2},

  author       = {Jariwala, Deep and Howell, Sarah L. and Chen, Kan-Sheng and Kang, Junmo and Sangwan, Vinod K. and Filippone, Stephen A. and Turrisi, Riccardo and Marks, Tobin J. and Lauhon, Lincoln J. and Hersam, Mark C.},

  abstractNote = {Here, the recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of “all 2D” van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p–n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells.},

  doi          = {10.1021/acs.nanolett.5b04141},

  journal      = {Nano Letters},

  number       = 1,

  volume       = 16,

  place        = {United States},

  year         = {Fri Dec 18 00:00:00 EST 2015},

  month        = {Fri Dec 18 00:00:00 EST 2015}

}

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Title: Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS 2

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Title: Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS ₂